PDF《BUK9Y30-75B》

1.

Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data BUK9Y30-75B N-channel TrenchMOS logic level FET Rev.

04 ―

10 April

2008 Product data sheet ? Low conduction losses due to low on-state resistance ? Q101 compliant ? Suitable for logic level gate drive sources ? Suitable for thermally demanding environments due to

175 °C rating ?

12 V,

24 V and

42 V loads ? Automotive systems ? General purpose power switching ? Motors, lamps and solenoids Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥

25 °C;

Tj ≤

175 °C - -

75 V ID drain current VGS =

5 V;

Tmb =

25 °C;

see Figure

1 and

4 - -

34 A Ptot total power dissipation Tmb =

25 °C;

see Figure

2 - -

85 W Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =

34 A;

Vsup ≤

75 V;

RGS =

50 Ω;

VGS =

5 V;

Tj(init) =

25 °C;

unclamped - -

78 mJ Dynamic characteristics QGD gate-drain charge VGS =

5 V;

ID =

25 A;

VDS =

60 V;

Tj =

25 °C;

see Figure

14 -

9 - nC Static characteristics RDSon drain-source on-state resistance VGS =

5 V;

ID =

15 A;

Tj =

25 °C;

see Figure

12 and

13 -

25 30 mΩ BUK9Y30-75B_4 Product data sheet Rev.

04 ―

10 April

2008 2 of

13 Nexperia BUK9Y30-75B N-channel TrenchMOS logic level FET 2. Pinning information 3. Ordering information 4. Limiting values [1] Single-pulse avalanche rating limited by maximum junction temperature of

175 °C. [2] Repetitive avalanche rating limited by average junction temperature of

170 °C. [3] Refer to application note AN10273 for further information. Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol

1 S source SOT669 (LFPAK)

2 S source

3 S source

4 G gate mb D mounting base;

connected to drain mb

1 2

3 4 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK9Y30-75B LFPAK plastic single-ended surface-mounted package (LFPAK);

4 leads SOT669 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥

25 °C;

Tj ≤

175 °C -

75 V VDGR drain-gate voltage RGS =

20 kΩ;

Tmb ≥

25 °C;

Tmb ≤

175 °C -

75 V VGS gate-source voltage -15

15 V ID drain current Tmb =

25 °C;

VGS =

5 V;

see Figure

1 and

4 -

34 A Tmb =

100 °C;

VGS =

5 V;

see Figure

1 -

24 A IDM peak drain current Tmb =

25 °C;

tp ≤

10 μs;

pulsed;

see Figure

4 -

137 A Ptot total power dissipation Tmb =

25 °C;

see Figure

2 -

85 W Tstg storage temperature -55

175 °C Tj junction temperature -55

175 °C Source-drain diode IS source current Tmb =

25 °C -

34 A ISM peak source current tp ≤

10 μs;

pulsed;

Tmb =

25 °C -

137 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =

34 A;

Vsup ≤

75 V;

RGS =

50 Ω;

VGS =

5 V;

Tj(init) =

25 °C;

unclamped -

78 mJ EDS(AL)R repetitive drain-source avalanche energy see Figure

3 [1][2] [3] - - J BUK9Y30-75B_4 Product data sheet Rev.