PDF《JMTK30N06A》

JMTK30N06A JieJie Microelectronics CO.

, Ltd Version :B -

1 - Description Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage

60 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC = 25℃

30 A TC = 100℃

20 A IDM Pulsed Drain Current note1

120 A EAS Single Pulsed Avalanche Energy

144 mJ PD Power Dissipation TC = 25℃

50 W RθJC Thermal Resistance, Junction to Case

3 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ JMT N-channel MOSFET Features ? 60V,30A ? RDS(ON)=29m? (Typ.) @ VGS = 10V ? Advanced Trench Technology ? Provide Excellent RDS(ON) and Low Gate Charge Application ? Load Switch ? PWM Application Package JMTK30N06A JMTK30N06A JieJie Microelectronics CO. , Ltd Version :B -

2 - Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA

60 - - V IDSS Zero Gate Voltage Drain Current VDS =60V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1.2 1.9 2.5 V RDS(on) Static Drain-Source on-Resistance note2 VGS =10V, ID =15A -

29 35 m? gFS Forward Transconductance VDS =5V, ID =20A -

13 - S Dynamic Characteristics Ciss Input Capacitance VDS = 30V, VGS =0V, f = 1.0MHz -

1900 - pF Coss Output Capacitance -

130 - pF Crss Reverse Transfer Capacitance -

95 - pF Qg Total Gate Charge VDS =30V, ID =20A, VGS =10V -

30 - nC Qgs Gate-Source Charge - 4.5 - nC Qgd Gate-Drain("Miller") Charge - 7.5 - nC Switching Characteristics td(on) Turn-on Delay Time V DS=30V, RL=1.5?, RGEN=3?, VGS =10V -

5 - ns tr Turn-on Rise Time - 2.6 - ns td(off) Turn-off Delay Time - 16.1 - ns tf Turn-off Fall Time - 2.3 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - -

30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - -

120 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=20A - - 1.2 V trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/μs -

35 - ns Qrr Body Diode Reverse Recovery Charge -

53 - nC Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% JMTK30N06A JieJie Microelectronics CO. , Ltd Version :B -

3 - Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms JMTK30N06A JieJie Microelectronics CO. , Ltd Version :B -

4 - Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) JMTK30N06A JieJie Microelectronics CO. , Ltd Version :B -

5 - Package Mechanical Data Dimensions Millimeters Inches Ref. Min. Typ. Max. Min. Typ. Max. A A2 B C D E G H L V1 V2 2.10

0 0.66 0.40 2.50 0.10 0.86 0.60 0.083

0 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 L2 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 7° 1.35 1.65 0° 6° 7° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 D1 E1 5.30REF 4.63 0.182 0.209REF B2 E H B G L C2 DETAIL A DETAIL A A C V1 V1 V

2 A2 D V

1 E1 D1 L2 TO-252 Reel Spectification-TO-252 W E F D0 P0 P2 P1 D

1 T t1 B0 K0 A0 5° A A A A B B B B Dimensions Millimeters Inches Ref. Min. Typ. Max. Min. Typ. Max. W E F D0 D1 P0 P1 P2 A0 B0 K0 T t1 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ