PDF《ESD7471, SZESD7471》

? Semiconductor Components Industries, LLC,

2014 September,

2014 ? Rev.

1 1 Publication Order Number: ESD7471/D ESD7471, SZESD7471 Ultra-Low Capacitance ESD Protection Micro?Packaged Diodes for ESD Protection The ESD7471 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features ? Industry Leading Capacitance Linearity Over Voltage ? Ultra?Low Capacitance: 0.35 pF Max ? Stand?off Voltage: 5.3 V ? Low Leakage: <

1 nA ? Low Dynamic Resistance: <

1 W ? IEC61000?4?2 Level

4 ESD Protection ?

1000 ESD IEC61000?4?2 Strikes ±8 kV Contact / Air Discharged ? SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;

AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ? RF Signal ESD Protection ? RF Switching, PA, and Antenna ESD Protection ? Near Field Communications ? USB 2.0, USB 3.0 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit IEC 61000?4?2 Contact (ESD) (Note 1) IEC 61000?4?2 Air (ESD) (Note 1) ESD ESD ±20 ±20 KV kV IEC 61000?4?5 (ESD) (Note 2) ESD 2.2 A Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction?to?Ambient °PD° RqJA

300 400 mW °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Lead Solder Temperature ? Maximum (10 Second Duration) TL

260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. At least

10 discharges at TA = 25°C, per IEC61000?4?2 waveform. 2. Non?repetitive current pulse at TA = 25°C, per IEC61000?4?5 waveform. 3. Mounted with recommended minimum pad size, DC board FR?4 Device Package Shipping? ORDERING INFORMATION http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ESD7471N2T5G XDFN2 (Pb?Free)

8000 / Tape &

Reel MARKING DIAGRAM D = Specific Device Code M = Date Code G = Pb?Free Package XDFN2 CASE 711AM D M G SZESD7471N2T5G XDFN2 (Pb?Free)

8000 / Tape &

Reel ESD7471, SZESD7471 http://onsemi.com

2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. Bi?Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage VRWM 5.3 V Breakdown Voltage VBR IT =

1 mA (Note 4) 7.0 V Reverse Leakage Current IR VRWM = 5.3 V <

1 50 nA Clamping Voltage VC IPP =