PDF《STS8DNF3LL》

This is information on a product in full production.

July

2013 DocID7410 Rev

12 1/14 STS8DNF3LL Dual N-channel

30 V, 0.017 ? typ.,

8 A, STripFET? II Power MOSFET in a SO-8 package Datasheet - production data Figure 1. Internal schematic diagram Features ? Optimal RDS(on) x Qg trade-off @ 4.5 V ? Conduction losses reduced ? Switching losses reduced Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. SO-8

1 4

5 8 Order code VDS RDS(on)max ID STS8DNF3LL

30 V 0.020 Ω

8 A Table 1. Device summary Order code Marking Package Packaging STS8DNF3LL 8DF3LL SO-8 Tape and reel www.st.com Contents STS8DNF3LL 2/14 DocID7410 Rev

12 Contents

1 Electrical ratings

3 2 Electrical characteristics

4 2.1 Electrical characteristics (curves)6

3 Test circuit

8 4 Package mechanical data

9 5 Packaging mechanical data

11 6 Revision history

13 DocID7410 Rev

12 3/14 STS8DNF3LL Electrical ratings

14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage

30 V VGS Gate- source voltage ±16 V ID Drain current (continuous) at TC =

25 °C single operating

8 A ID Drain current (continuous) at TC =

100 °C single operating

5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed)

32 A PTOT Total dissipation at TC =

25 °C dual operating Total dissipation at TC =

25 °C single operating

2 1.6 W W Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. Mounted on FR-4 board with 0.5 in2 pad of Cu Thermal resistance junction-ambient single operating Thermal resistance junction-ambient dual operating

78 62.5 °C/W °C/W TJ Thermal operating junction-ambient

150 °C Tstg Storage temperature -55 to

150 °C Electrical characteristics STS8DNF3LL 4/14 DocID7410 Rev

12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID =

250 μA, VGS =

0 30 V IDSS Zero gate voltage Drain current (VGS = 0) VDS =

30 V

1 μA VDS=30 V, TC=125°C

10 μA IGSS Gate-body leakage current (VDS = 0) VGS = ±

16 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID =

250 μA

1 V RDS(on) Static drain-source on- resistance VGS =

10 V, ID =

4 A VGS = 4.5 V, ID =

4 A 0.017 0.020 0.020 0.024 W W Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration =

300 μs, duty cycle 1.5. Forward transconductance VDS =

15 V, ID=

4 A - 12.5 S Ciss Input capacitance VDS =

25 V, f =

1 MHz, VGS =

0 -

800 pF Coss Output capacitance -

250 pF Crss Reverse transfer capacitance -

60 pF Qg Total gate charge VDD =

15 V, ID =

8 A, VGS =

5 V (see Figure 15) - 12.5

17 nC Qgs Gate-source charge - 3.2 nC Qgd Gate-drain charge - 4.5 nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD=15 V, ID=4 A, RG=4.7Ω, VGS= 4.5V (see Figure 14) -

18 - ns tr Rise time -

32 - ns td(off) Turn-off delay time VDD=15 V, ID=4A, RG=4.7 Ω, VGS= 4.5 V (see Figure 14) -

21 - ns tf Fall time -