PDF《BUK7Y28-75B》

BUK7Y28-75B N-channel TrenchMOS standard level FET Rev.

04 ―

7 April

2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits ? Q101 compliant ? Suitable for standard level gate drive sources ? Suitable for thermally demanding environments due to

175 °C rating 1.3 Applications ?

12 V,

24 V and

42 V loads ? Automotive systems ? DC-to-DC converters ? Engine management ? General purpose power switching ? Solenoid drivers ? Transmission control 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥

25 °C;

Tj ≤

175 °C - -

75 V ID drain current VGS =

10 V;

Tmb =

25 °C;

see Figure 1;

see Figure

4 - - 35.5 A Ptot total power dissipation Tmb =

25 °C;

see Figure

2 - -

85 W Static characteristics RDSon drain-source on-state resistance VGS =

10 V;

ID =

15 A;

Tj =

25 °C;

see Figure 12;

see Figure

13 -

23 28 m? BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev.

04 ―

7 April

2010 2 of

14 Nexperia BUK7Y28-75B N-channel TrenchMOS standard level FET 2. Pinning information 3. Ordering information Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 35.5 A;

Vsup ≤

75 V;

RGS =

50 ?;

VGS =

10 V;

Tj(init) =

25 °C;

unclamped - -

75 mJ Dynamic characteristics QGD gate-drain charge ID =

15 A;

VDS =

60 V;

VGS =

10 V;

see Figure

14 - 7.4 - nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 S source SOT669 (LFPAK)

2 S source

3 S source

4 G gate mb D mounting base;

connected to drain mb

1 2

3 4 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK7Y28-75B LFPAK plastic single-ended surface-mounted package (LFPAK);

4 leads SOT669 BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev.

04 ―

7 April

2010 3 of

14 Nexperia BUK7Y28-75B N-channel TrenchMOS standard level FET 4. Limiting values [1] Single-pulse avalanche rating limited by maximum junction temperature of

175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of

170 °C. [3] Refer to application note AN10273 for further information. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥

25 °C;

Tj ≤

175 °C - -

75 V VDGR drain-gate voltage RGS =

20 k? - -

75 V VGS gate-source voltage -20 -

20 V ID drain current Tmb =

25 °C;

VGS =

10 V;

see Figure 1;

see Figure

4 - - 35.5 A Tmb =

100 °C;

VGS =

10 V;

see Figure

1 - - 25.1 A IDM peak drain current Tmb =

25 °C;

tp ≤

10 ?s;

pulsed;

see Figure

4 - -

142 A Ptot total power dissipation Tmb =

25 °C;

see Figure

2 - -

85 W Tstg storage temperature -55 -

175 °C Tj junction temperature -55 -

175 °C Source-drain diode IS source current Tmb =