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1/9 ADVANCED DATA May,

29 2003 PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ? EXCELLENT THERMAL STABILITY ? COMMON SOURCE CONFIGURATION ? POUT =

8 W with

17 dB gain @

500 MHz / 12.

5V ? INTEGRATED ESD PROTECTION ? NEW LEADLESS PLASTIC PACKAGE ? SUPPLIED IN TAPE & REEL OF 3K UNITS DESCRIPTION The PD55008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at

12 V in common source mode at frequencies up to

1 GHz. PD55008L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT?. PD55008L's superior linearity performance makes it an ideal solution for car mobile radio. ABSOLUTE MAXIMUM RATINGS (TCASE =

25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage

40 V VGS Gate-Source Voltage -0.5 to

15 V ID Drain Current

5 A PDISS Power Dissipation (@ Tc = 70°C) 19.5 W Tj Max. Operating Junction Temperature

150 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 4.1 °C/W ORDER CODE PD55008L BRANDING

55008 PowerFLAT?(5x5) PIN CONNECTION TOP VIEW Obsolete Product(s) - Obsolete Product(s) PD55008L 2/9 ELECTRICAL SPECIFICATION (TCASE =

25 ° C) STATIC DYNAMIC ESD PROTECTION CHARACTERISTICS MOISTURE SENSITIVITY LEVEL Symbol Test Conditions Min. Typ. Max. Unit IDSS VGS =

0 V VDS =

28 V

1 ?A IGSS VGS =

5 V VDS =

0 V

1 ?A VGS(Q) VDS =

10 V ID =

150 mA 2.0 5.0 V VDS(ON) VGS =

10 V ID = 0.5 A 0.13 0.14 V GFS VDS =

10 V ID = 1.5 A 1.6 mho CISS VGS =

0 V VDS = 12.5 V f =

1 MHz

53 pF COSS VGS =

0 V VDS = 12.5 V f =

1 MHz

38 pF CRSS VGS =

0 V VDS = 12.5 V f =

1 MHz 3.2 pF Symbol Test Conditions Min. Typ. Max. Unit POUT VDD = 12.5 V IDQ =

150 mA f =

500 MHz

8 W GP VDD = 12.5 V IDQ =

150 mA POUT =

8 W f =

500 MHz

17 19 dB ηD VDD = 12.5 V IDQ =

150 mA POUT =

8 W f =

500 MHz

55 63 % Load mismatch VDD = 15.5 V IDQ =

150 mA POUT =

8 W f =

500 MHz ALL PHASE ANGLES 20:1 VSWR Test Conditions Class Human Body Model

2 Machine Model M3 Test Methodology Rating J-STD-020B MSL

3 Obsolete Product(s) - Obsolete Product(s) 3/9 PD55008L Capacitance Vs Supply Voltage

1 10

100 1000

0 2

4 6

8 10

12 14

16 Vds (V) C (pF) Coss Ciss Crss TYPICAL PERFORMANCE Output Power Vs Input Power

0 2

4 6

8 10

12 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 Pin (W) Pout (W) f = 500MHz Vds = 12.5 V Idq =

120 mA Power Gain Vs Output Power

8 10

12 14

16 18

20 22

24 26

0 1

2 3

4 5

6 7

8 9

10 11 Pout (W) Gp (dB) f =

500 MHz Vds = 12.5 V Idq =

120 mA Efficiency Vs Output Power

10 20

30 40

50 60

70 80

0 1

2 3

4 5

6 7

8 9

10 11 Pout (W) Nd (%) f =

500 MHz Vds = 12.5 V Idq =

120 mA Input Return Loss Vs Output Power -20 -15 -10 -5

0 0

1 2

3 4

5 6

7 8

9 10

11 Pout (W) RL (dB) f = 500MHz Vds = 12.5 V Idq =

120 mA Obsolete Product(s) - Obsolete Product(s) PD55008L 4/9 S-PARAMETER (PD55008L) (VDS = 12.5V IDS = 0.15A) FREQ IS11I IS21I IS12I S12 ∠Φ IS22I S22 ∠Φ (MHz)

50 0.783 -134 16.75

100 0.034

11 0.654 -135

100 0.774 -153 8.73

82 0.034 -6 0.667 -150

150 0.791 -159 5.61

70 0.033 -15 0.698 -155

200 0.814 -163 4.00

61 0.029 -22 0.737 -157

250 0.838 -165 3.00