PDF《HiPerFASTTM IGBT》

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2002 IXYS All rights reserved HiPerFASTTM IGBT Preliminary Data Sheet VCES =

1200 V IC25 =

70 A VCE(sat) = 4.

0 V tfi(typ) =

115 ns IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 G = Gate, C = Collector, E = Emitter, TAB = Collector Features International standard packages JEDEC TO-264 and PLUS247TM Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Easy to mount with

1 screw, (isolated mounting screw hole) DS98961 (10/02) Symbol TestConditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC =

1 mA, VGE =

0 V

1200 V VGE(th) IC =

750 ?A, VCE = VGE 2.5

5 V ICES VCE = VCES TJ = 25°C

250 ?A VGE =

0 V TJ = 125°C

5 mA IGES VCE =

0 V, VGE = ±20 V ±100 nA VCE(sat) IC = IC90 , VGE =

15 V 4.0 V TJ = 125°C 3.2 V Symbol TestConditions Maximum Ratings VCES TJ = 25°C to 150°C

1200 V VCGR TJ = 25°C to 150°C;

RGE =

1 M?

1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

70 A IC90 TC = 90°C

35 A ICM TC = 25°C,

1 ms

140 A SSOA VGE =

15 V, TVJ = 125°C, RG =

5 ? ICM =

90 A (RBSOA) Clamped inductive load @ 0.8 VCES PC TC = 25°C

350 W TJ -55 ... +150 °C TJM

150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering

300 °C 1.6 mm (0.062 in.) from case for

10 s Md Mounting torque (M3) (IXGK) 1.13/10Nm/lb.in. Weight TO-264AA

10 g PLUS247TM

6 g TO-264 AA (IXGK) (D1) G E C (TAB) G C E C (TAB) C Spring clip or clamp assembly possible. PLUS 247TM (IXGX) IXYS reserves the right to change limits, test conditions, and dimensions. IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 TO-264 AA Outline (IXGK) Remarks: Switching times may increase for VCE (Clamp) > 0.8 ? VCES , higher TJ or increased RG Remarks: Switching times may increase for VCE (Clamp) > 0.8 ? VCES , higher TJ or increased RG Symbol TestConditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90 ;

VCE =

10 V,

30 40 S Pulse test, t ≤

300 ?s, duty cycle ≤

2 % Cies

4620 pF Coes VCE =

25 V, VGE =

0 V, f =

1 MHz

260 pF Cres

90 pF Qg

170 nC Qge IC = IC90 , VGE =

15 V, VCE = 0.5 VCES

28 nC Qgc

57 nC td(on)

50 ns tri

27 ns td(off)

150 220 ns tfi

115 190 ns Eoff 3.0 4.2 mJ td(on)

55 ns tri

31 ns Eon 2.6 mJ td(off)

220 ns tfi

260 ns Eoff 6.2 mJ RthJC 0.35 K/W RthCK 0.15 K/W Inductive load, TJ = 125° ° ° ° °C IC = IC90 , VGE =

15 V VCE = 0.8 VCES , RG = Roff =

5 ? Inductive load, TJ = 25° ° ° ° °C IC = IC90 , VGE =

15 V VCE = 0.8 VCES , RG = Roff =

5 ? PLUS247TM Outline (IXGX) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 b2 2.92 3.12 .115 .123 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector) Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46BSC .215BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim. ReverseDiode(FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol TestConditions min. typ. max. VF IF = IC90 , VGE =