PDF《Gallium Nitride 28V, 5W RF Power》

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1 FEATURES ? Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz ? 100% RF Tested at 2500MHz ? 5W P3dB CW Power ? 15.

5dB Power Gain ? Low cost, surface mount SOIC package ? High reliability gold metallization process ? Lead-free and RoHS compliant ? Subject to EAR99 Export Control DC - 6000MHz

5 Watt,

28 Volt GaN HEMT RF Performance (CW): VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Typ Units P3dB Average Output Power at 3dB Compression 5.1 W P1dB Average Output Power at 1dB Compression 2.9 W h Drain Efficiency at 3dB Compression

56 % OFDM Performance: VDS = 28V, IDQ = 100mA, Single carrier OFDM waveform 64-QAM 3/4,

8 burst, continuous frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3500MHz, POUT,AVG = 24dBm, TC = 25°C. Measured in Load Pull System Symbol Parameter Typ Units GP Power Gain 11.2 dB h Drain Efficiency

9 % EVM Error Vector Magnitude 1.0 % Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC? NRF1 process - A proprietary GaN-on-Silicon technology 2-Tone Specifications: VDS = 28V, IDQ = 50mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25°C Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P1dB,PEP Peak Envelope Power at 1dB Compression 5.0 7.5 - W GSS Small Signal Gain 14.5 15.5 - dB PIMD3 Peak Envelope Power at -35dBc IMD3 - 2.5 - W h Drain Efficiency at 3dB Compression

55 60 - % Page

2 Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 2mA)

100 - - V IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) - 0.5

2 mA On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 2mA) -2.0 -1.5 -1.0 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 50mA) -1.8 -1.3 -0.8 V RON On Resistance (VGS = 2V, ID = 15mA) - 2.0 2.2 W ID Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2V) 1.1 1.3 - A DC Specifications: TC=25°C Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage

100 V VGS Gate-Source Voltage -10 to

3 V PT Total Device Power Dissipation (Derated above 25°C) 7.6 W qJC Thermal Resistance (Junction-to-Case)

23 °C/W TSTG Storage Temperature Range -65 to

150 °C TJ Operating Junction Temperature

200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>

250V) MM Machine Model ESD Rating (per JESD22-A115) M1(>

50V) MSL Moisture Sensitivity Level (per IPC/JEDEC J-STD-020): Rating of

3 at

260 °C Package Peak Temperature Page

3 ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Table 1: Optimum Source and Load Impedances (VDS = 28V) Frequency ZS (W) ZL (W) IDQ (mA) Optimized Tuning Condtion

900 9.2 + j23.8 52.6 + j22.8

50 CW Power and Efficiency

1800 5.2 + j0.5 24.5 + j18.3

50 CW Power and Efficiency

2140 5.0 - j2.6 17.1 + j15.0

50 CW Power and Efficiency

2500 5.4 - j10.5 14.7 + j10.0

50 CW Power and Efficiency

3500 5.0 - j21.0 11.2 + j4.7

50 CW Power and Efficiency

900 21.9 + j43.4 59.5 + j33.7

100 W-CDMA, POUT, Efficiency, -45dBc ACPR

1800 13.1 + j24.3 34.5 + j48.8

100 W-CDMA, POUT, Efficiency, -45dBc ACPR

2140 5.4 + j17.3 25.4 + j36.4

100 W-CDMA, POUT, Efficiency, -45dBc ACPR

2600 4.0 + j6.8 12.2 + j25.8

100 LTE, POUT, Efficiency, -45dBc ACPR

2500 5.0 + j16.2 13.2 + j20.4

100 OFDM, Maximum POUT, 1.5% EVM