PDF《PMV16XN》

PMV16XN

20 V, N-channel Trench MOSFET

11 November

2014 Product data sheet 1.

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Low threshold voltage ? Very fast switching ? Enhanced power dissipation capability of

1200 mW 3. Applications ? LED driver ? Power management ? Low-side load switch ? Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - -

20 V VGS gate-source voltage Tj =

25 °C -12 -

12 V ID drain current VGS = 4.5 V;

Tamb =

25 °C;

t ≤

5 s [1] - - 8.6 A Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V;

ID = 6.8 A;

Tj =

25 °C -

16 20 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . Nexperia PMV16XN

20 V, N-channel Trench MOSFET PMV16XN All information provided in this document is subject to legal disclaimers. Product data sheet

11 November

2014 2 /

15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3 TO-236AB (SOT23) S D G 017aaa253 Table 3. Ordering information Package Type number Name Description Version PMV16XN TO-236AB plastic surface-mounted package;

3 leads SOT23 6. Marking Table 4. Marking codes Type number Marking code [1] PMV16XN %BZ [1] % = placeholder for manufacturing site code Nexperia PMV16XN

20 V, N-channel Trench MOSFET PMV16XN All information provided in this document is subject to legal disclaimers. Product data sheet

11 November

2014 3 /

15 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -

20 V VGS gate-source voltage Tj =

25 °C -12

12 V VGS = 4.5 V;

Tamb =

25 °C;

t ≤

5 s [1] - 8.6 A VGS = 4.5 V;

Tamb =

25 °C [1] - 6.8 A ID drain current VGS = 4.5 V;

Tamb =

100 °C [1] - 4.3 A IDM peak drain current Tamb =

25 °C;

single pulse;

tp ≤

10 ?s -

27 A [2] -

510 mW Tamb =

25 °C [1] -

1200 mW Ptot total power dissipation Tsp =

25 °C -

6940 mW Tj junction temperature -55

150 °C Tamb ambient temperature -55

150 °C Tstg storage temperature -65

150 °C Source-drain diode IS source current Tamb =

25 °C [1] - 1.2 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Nexperia PMV16XN

20 V, N-channel Trench MOSFET PMV16XN All information provided in this document is subject to legal disclaimers. Product data sheet

11 November

2014 4 /

15 Tj (°C) -

75 175

125 25

75 -

25 017aaa123

40 80

120 Pder (%)

0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) -

75 175

125 25

75 -

25 017aaa124

40 80

120 Ider (%)

0 Fig. 2. Normalized continuous drain current as a function of junction temperature aaa-015214

1 10-1

10 102 lD (A) 10-2 VDS (V) 10-1

102 10

1 DC;

Tamb =

25 °C;

6 cm2 tp =

100 ms tp =

10 ms DC;

Tsp =

25 °C tp =

1 ms tp =

100 ?s tp =

10 ?s IDM = single pulse Fig. 3. Safe operating area;

junction to ambient;

continuous and peak drain currents as a function of drain- source voltage 8. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] -

208 245 K/W in free air [2] -

88 104 K/W Rth(j-a) thermal resistance from junction to ambient t ≤

5 s [2] -

55 65 K/W Nexperia PMV16XN

20 V, N-channel Trench MOSFET PMV16XN All information provided in this document is subject to legal disclaimers. Product data sheet

11 November

2014 5 /

15 Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point -

13 18 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . aaa-013409 tp (s) 10-3

102 103

10 1 10-2 10-1

102 10

103 Zth(j-a) (K/W)

1 duty cycle =

1 0.20 0.25 0.50 0.75 0.33 0.02 0.01

0 0.10 0.05 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values aaa-013411 tp (s) 10-3

102 103

10 1 10-2 10-1

102 10

103 Zth(j-a) (K/W)

1 0 0.01 0.02 0.33 0.75 duty cycle =

1 0.05 0.10 0.20 0.25 0.50 FR4 PCB, mounting pad for drain

6 cm

2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values Nexperia PMV16XN

20 V, N-channel Trench MOSFET PMV16XN All information provided in this document is subject to legal disclaimers. Product data sheet

11 November

2014 6 /

15 9. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID ........