PDF《AlGaN/GaN 异质结中二维电子气多子带解析建模》

182 3 结束语 论文针对生长在蓝宝石(c-Al2O3)衬底上的Ga面AlxGa1-xN/GaN异质结构进行了解析建模, 给出了能带、 二维电子气子带能级、波函数的解析模型.将解析模型求解出的势阱深度,波函数与泊松-薛定谔方程自洽 结果进行分析比较,验证了解析模型结果的正确性.当Al 组分不低于 0.15 时,解析方法是对材料及器件 应用进行分析的一种简单而且行之有效的方法,避免了纯数值性自洽求解泊松-薛定谔方程方法计算复杂、 耗时长的缺点. 参考文献: [1] Lee S N, Cho S Y, Ryu H Y, et al. High-power GaN-based blue-violet laser diodes with AlGaN/GaN multiquantum barriers [J]. Appl. Phys. Lett., 2006, 88: 111101. [2] Xing H L, DoraY, ChiniA, et al. High breakdown voltageAl-GaN-GaN HEMTs achieved by multiple field plates [J]. IEEE Electron Dev Lett, 2004, 25: 161-163. [3] 王冲, 张金风, 郝跃, 等.AlGaN/GaN HEMT在N2中高温退火研究 [J]. 西安电子科技大学学报 (自然科学版) 2006.

33 (6): 862-865. Wang Chong, Zhang Jin-feng, Hao Yue, et al. Study of ALGaN/GaN HEMT high temperature anneal in N2 [J]. Journal of XIDIAN University (Natural Science) 2006.

33 (6): 862-865. [4] Ambacher O, Smart J, Shealy J R, et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-faceAlGaN/GaN heterostructures [J]. J.Appl. Phys. 1999, 85: 3222. [5] Zhang Jin-Feng, Hao Yue. GaN-based heterostructures: electric-static equilibrium and boundary conditions [J].CHINESE PHYSICS 2006,15(10): 2402-2406. [6] Shur M S. GaN and related mater........