PDF《PBSS5350D》

6 ―

28 June

2011 4 of

12 NXP Semiconductors PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V;

IE =

0 A;

Tamb =

25 °C - - -100 nA VCB = -50 V;

IE =

0 A;

Tj =

150 °C - - -50 ?A IEBO emitter-base cut-off current VEB = -5 V;

IC =

0 A;

Tamb =

25 °C - - -100 nA hFE DC current gain VCE = -2 V;

IC = -500 mA;

Tamb =

25 °C

200 - - VCE = -2 V;

IC = -1 A;

pulsed;

tp ≤

300 ?s;

δ ≤ 0.02 ;

Tamb =

25 °C

200 - - VCE = -2 V;

IC = -2 A;

pulsed;

tp ≤

300 ?s;

δ ≤ 0.02 ;

Tamb =

25 °C

100 - - VCEsat collector-emitter saturation voltage IC = -500 mA;

IB = -50 mA;

Tamb =

25 °C - - -100 mV IC = -1 A;

IB = -50 mA;

Tamb =

25 °C - - -180 mV IC = -2 A;

IB = -200 mA;

pulsed;

tp ≤

300 ?s;

δ ≤ 0.02 ;

Tamb =

25 °C - - -300 mV RCEsat collector-emitter saturation resistance -

120 150 m? VBEsat base-emitter saturation voltage - - -1.2 V VBEon base-emitter turn-on voltage VCE = -2 V;

IC = -1 A;

pulsed;

tp ≤

300 ?s;

δ ≤ 0.02 ;

Tamb =

25 °C - - -1.1 V fT transition frequency VCE = -5 V;

IC = -100 mA;

f =

100 MHz;

Tamb =

25 °C

100 - - MHz Cc collector capacitance VCB = -10 V;

IE =

0 A;

ie =

0 A;

f =

1 MHz;

Tamb =

25 °C - -

40 pF PBSS5350D All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

6 ―

28 June

2011 5 of

12 NXP Semiconductors PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor VCE = -2 V (1) Tamb =

150 °C (2) Tamb =

25 °C (3) Tamb = -55 °C Tamb =

25 °C Fig 1. DC current gain as a function of collector current;

typical values Fig 2. Collector current as a function of collector-emitter voltage;

typical values Tamb =

25 °C VCE = -2 V (1) Tamb = -55 °C (2) Tamb =

25 °C (3) Tamb =

150 °C Fig 3. Collector current as a function of collector-emitter voltage;

typical values Fig 4. Base-emitter voltage as a function of collector current;

typical values mgw167

0 hFE IC (mA)

1000 200

400 600

800 ?10?1 ?1 ?10 ?102 ?103 ?104 (1) (2) (3) VCE (V) 0.0 C2.0 C1.6 C0.8 C1.2 C0.4 006aac605 C400 C600 C200 C800 C1000 IC (mA)

0 IB (nA) = C3.96 C0.99 C3.63 C0.66 C1.65 C1.98 C2.31 C2.64 C0.33 C2.97 C1.32 C3.30 VCE (V) 0.0 C2.0 C1.6 C0.8 C1.2 C0.4 006aac606 C2 C3 C1 C4 C5 IC (A)

0 C25 C75 C100 C125 C150 C175 C50 IB (mA) = C250 C225 C200 mgw168

0 IC (mA) VBE (V) ?1.2 ?0.4 ?0.8 ?10?1 ?1 ?10 ?102 ?103 ?104 (1) (2) (3) PBSS5350D All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

6 ―

28 June

2011 6 of

12 NXP Semiconductors PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor IC/IB =

10 (1) Tamb = -55 °C (2) Tamb =

25 °C (3) Tamb =

150 °C IC/IB =

10 (1) Tamb =

150 °C (2) Tamb =

25 °C (3) Tamb = -55 °C Fig 5. Base-emitter saturation voltage as a function of collector current;

typical values Fig 6. Collector-emitter saturation voltage as a function of collector current;

typical values IC/IB =

20 (1) Tamb =

150 °C (2) Tamb =

25 °C (3) Tamb = -55 °C Fig 7. Collector-emitter saturation resistance as a function of collector current;

typical values mgw170 IC (mA) ?1.4 ?0.8 ?0.6 ?0.4 ?0.2 ?1.0 ?1.2 ?10?1 ?1 ?10 ?102 ?103 ?104 VBEsat (V) (1) (2) (3) mgw169 IC (mA) ?103 ?102 ?10 ?1 ?10?1 ?1 ?10 ?102 ?103 ?104 VCEsat (mV) (1) (2) (3) mgu390