PDF《V40PWM15C》

V40PWM15C www.

vishay.com Vishay General Semiconductor Revision: 11-Feb-2019

1 Document Number:

87506 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF =

5 A DESIGN SUPPORT TOOLS AVAILABLE FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C ? AEC-Q101 qualified available? - Automotive ordering code: base P/NHM3 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. MECHANICAL DATA Case: SlimDPAK (TO-252AE)? Molding compound meets UL

94 V-0 flammability rating? Base P/N-M3 - halogen-free, RoHS-compliant? Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102? M3 and HM3 suffix meets JESD

201 class

2 whisker test ? Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/R?JA PRIMARY CHARACTERISTICS IF(AV)

40 A VRRM

150 V IFSM

240 A VF at IF =

20 A (TA =

125 °C) 0.76 V TJ max.

175 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode SlimDPAK (TO-252AE) eSMP? Series

1 2 K PIN

1 K HEATSINK PIN

2 3

3 D D

3 D 3D Models MAXIMUM RATINGS (TA =

25 °C unless otherwise noted) PARAMETER SYMBOL V40PWM15C UNIT Device marking code V40PWM15C Maximum repetitive peak reverse voltage VRRM

150 V Maximum average forward rectified current (Fig. 1) per device IF(AV) (1)

40 A per diode

20 A Peak forward surge current 8.3 ms single half sine-wave? superimposed on rated load per diode IFSM

240 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C V40PWM15C www.vishay.com Vishay General Semiconductor Revision: 11-Feb-2019

2 Document Number:

87506 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test:

300 μs pulse width,

1 % duty cycle (2) Pulse test: pulse width ?

5 ms Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/R?JA (2) Free air, mounted on recommended copper pad area;

thermal resistance R?JA - junction to ambient (3) Mounted on infinite heat sink;

thermal resistance R?JM - junction-to-mount Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TA =

25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 5.0 A TA =

25 °C VF (1) 0.77 - V IF =

10 A 0.97 - IF =

20 A 1.36 1.45 IF = 5.0 A TA =

125 °C 0.60 - IF =

10 A 0.69 - IF =

20 A 0.76 0.84 Reverse current per diode VR =

100 V TA =

25 °C IR (2) 0.01 - mA TA =