PDF《IRFB38N20D》

Notes ? through ? are on page

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1 06/25/02 IRFB38N20D IRFS38N20D IRFSL38N20D SMPS MOSFET HEXFET? Power MOSFET VDSS RDS(on) max ID 200V 0.054? 44A D2Pak IRFS38N20D TO-220AB IRFB38N20D TO-262 IRFSL38N20D Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V

44 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

32 A IDM Pulsed Drain Current ?

180 PD @TA = 25°C Power Dissipation ? 3.8 W PD @TC = 25°C Power Dissipation

320 Linear Derating Factor 2.1 W/°C VGS Gate-to-Source Voltage ±

30 V dv/dt Peak Diode Recovery dv/dt ? 9.5 V/ns TJ Operating Junction and -55 to +

175 TSTG Storage Temperature Range Soldering Temperature, for

10 seconds

300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw?

10 lbf?in (1.1N?m) Absolute Maximum Ratings l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case CCC 0.47 RθCS Case-to-Sink, Flat, Greased Surface ? 0.50 CCC °C/W RθJA Junction-to-Ambient? CCC

62 RθJA Junction-to-Ambient? CCC

40 PD - 94358A IRFB/IRFS/IRFSL38N20D

2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance

17 CCC CCC S VDS = 50V, ID = 26A Qg Total Gate Charge CCC

60 91 ID = 26A Qgs Gate-to-Source Charge CCC

17 25 nC VDS = 100V Qgd Gate-to-Drain ( Miller ) Charge CCC

28 42 VGS = 10V, ? td(on) Turn-On Delay Time CCC

16 CCC VDD = 100V tr Rise Time CCC

95 CCC ID = 26A td(off) Turn-Off Delay Time CCC

29 CCC RG = 2.5? tf Fall Time CCC

47 CCC VGS = 10V ? Ciss Input Capacitance CCC

2900 CCC VGS = 0V Coss Output Capacitance CCC

450 CCC VDS = 25V Crss Reverse Transfer Capacitance CCC

73 CCC pF ? = 1.0MHz Coss Output Capacitance CCC

3550 CCC VGS = 0V, VDS = 1.0V, ? = 1.0MHz Coss Output Capacitance CCC

180 CCC VGS = 0V, VDS = 160V, ? = 1.0MHz Coss eff. Effective Output Capacitance CCC

380 CCC VGS = 0V, VDS = 0V to 160V ? Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy?? CCC

460 mJ IAR Avalanche Current? CCC

26 A EAR Repetitive Avalanche Energy? CCC

32 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) CCC CCC showing the ISM Pulsed Source Current integral reverse (Body Diode) ?? CCC CCC p-n junction diode. VSD Diode Forward Voltage CCC CCC 1.5 V TJ = 25°C, IS = 26A, VGS = 0V ? trr Reverse Recovery Time CCC

160 240 nS TJ = 25°C, IF = 26A Qrr Reverse RecoveryCharge CCC 1.3 2.0 ?C di/dt = 100A/?s ? ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics

44 180 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage

200 CCC CCC V VGS = 0V, ID = 250?A ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient CCC 0.22 CCC V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance CCC CCC 0.054 ? VGS = 10V, ID = 26A ? VGS(th) Gate Threshold Voltage 3.0 CCC 5.0 V VDS = VGS, ID = 250?A CCC CCC

25 ?A VDS = 200V, VGS = 0V CCC CCC

250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage CCC CCC

100 VGS = 30V Gate-to-Source Reverse Leakage

100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current IRFB/IRFS/IRFSL38N20D www.irf.com