PDF《FDA70N20》

FDA70N20 ― N-Channel Uni FET TM MOSFET ?2005 Fairchild Semiconductor Corporation FDA70N20 Rev C2 www.

fairchildsemi.com

1 FDA70N20 N-Channel UniFETTM MOSFET

200 V,

70 A,

35 mΩ Features ? RDS(on) =

35 mΩ (Max.) @ VGS =

10 V, ID =

35 A ? Low Gate Charge (Typ.

66 nC) ? Low Crss (Typ.

89 pF) ? 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor'

s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Absolute Maximum Ratings Applications ? Uninterruptible Power Supply ? AC-DC Power Supply TC = 25°C unless otherwise noted. TO-3PN G D S G S D Thermal Characteristics Symbol Parameter FDA70N20 Unit VDSS Drain-Source Voltage

200 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)

70 45 A A IDM Drain Current - Pulsed (Note 1)

280 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2)

1742 mJ IAR Avalanche Current (Note 1)

70 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate Above 25°C

417 3.3 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for

5 Seconds

300 °C Symbol Parameter FDA70N20 Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.3 °C/W RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max.

40 °C/W May

2014 www.fairchildsemi.com

2 FDA70N20 ― N-Channel Uni FET TM MOSFET ?2005 Fairchild Semiconductor Corporation FDA70N20 Rev C2 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity TO-3PN Tube N/A N/A

30 units Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted. NOTES: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.533 mH, IAS =

70 A, VDD =

50 V, RG =

25 Ω, starting TJ = 25°C. 3.ISD ≤

70 A, di/dt ≤

200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. FDA70N20 FDA70N20 Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250?A

200 -- -- V ?BVDSS / ?TJ Breakdown Voltage Temperature Coefficient ID = 250?A, Referenced to 25°C -- 0.2 -- °C V/ IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V VDS = 160V, TC = 125°C -- -- -- --

1 10 ?A ?A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- --

100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250?A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 35A -- 0.029 0.035 ? gFS Forward Transconductance VDS = 40V, ID = 35A --

47 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz --

3050 3970 pF Coss Output Capacitance --

750 980 pF Crss Reverse Transfer Capacitance --

89 130 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100V, ID = 70A RG = 25? (Note 4) --

71 150 ns tr Turn-On Rise Time --

235 480 ns td(off) Turn-Off Delay Time --