PDF《STPS20H100C》

K K A1 A1 A2 A2 D2PAK A1 K A2 A1 K A2 TO-220AB A1 K A2 TO-220FPAB A1K A2 I2PAK K K Features ? Negligible switching losses ? High junction temperature capability ? Low leakage current ? Good trade off between leakage current and forward voltage drop ? Avalanche rated ? Insulated package: TO-220FPAB C Insulating voltage =

2000 VRMS sine ? ECOPACK?2 compliant component for D?PAK on demand Description Dual center tap Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters.

Product status link STPS20H100C Product summary IF(AV)

2 x

10 A VRRM

100 V Tj (max)

175 °C VF (typ) 0.59 V

100 V power Schottky rectifier STPS20H100C Datasheet DS1216 - Rev

9 - April

2018 For further information contact your local STMicroelectronics sales office. www.st.com

1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at

25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage

100 V IF(RMS) Forward rms current

30 A IF(AV) Average forward current δ = 0.5, square wave TO-220AB, D2PAK, I2PAK TC =

160 °C Per diode

10 A Per device

20 TO-220FPAB TC =

145 °C Per diode

10 TC =

125 °C Per device

20 IFSM Surge non repetitive forward current tp =

10 ms sinusoidal

250 A PARM Repetitive peak avalanche power tp =

10 ?s, Tj=

125 °C

775 W Tstg Storage temperature range -65 to +

175 °C Tj Maximum operating junction temperature (1) +

175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB, D2PAK, I2PAK Per diode 1.6 °C/W TO-220FPAB

4 TO-220AB, D2PAK, I2PAK Total 0.9 TO-220FPAB 3.2 Rth(c) Coupling TO-220AB, D2PAK, I2PAK - 0.15 °C/W TO-220FPAB 2.5 When the diodes

1 and

2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STPS20H100C Characteristics DS1216 - Rev

9 page 2/18 Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj =

25 °C VR = VRRM - 4.5 ?A Tj =

125 °C -

2 6 mA VF (2) Forward voltage drop Tj =

25 °C IF =

8 A - 0.71 V IF =

10 A - 0.77 IF =

16 A - 0.81 IF =

20 A - 0.88 Tj =

125 °C IF =

8 A - 0.56 0.58 IF =

10 A - 0.59 0.64 IF =

16 A - 0.65 0.68 IF =

20 A - 0.67 0.73 1. Pulse test: tp =

5 ms, δ < 2% 2. Pulse test: tp =

380 ?s, δ < 2% To evaluate the conduction losses use the following equation: P = 0.55 x IF(AV) + 0.009 IF

2 (RMS) STPS20H100C Characteristics DS1216 - Rev

9 page 3/18 1.2 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current (per diode) P (W) F(AV)

0 2

4 6

8 10

12 0

2 4

6 8 T δ=tp/T tp I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ =

1 Figure 2. Average forward current versus ambient temperature (δ= 0.5, per diode) I (A) F(AV)

0 25

50 75

100 125

150 175

0 2

4 6

8 10

12 TO-220FPAB TO-220AB R =R th(j-a) th(j-c) R =15°C/W th(j-a) R =40°C/W th(j-a) T (°C) amb T δ=tp/T tp Figure 3. Normalized avalanche power derating versus pulse (Tj=

125 °C) P (tp) P (10 ?s) ARM ARM 0.001 0.01 0.1

1 1

10 100

1000 t (?s) p Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode) Z /R th(j-c) th(j-c) 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 t (s) p Single pulse TO-220AB, D PAK, I PAK