PDF《RCX450N20》

RCX450N20 Nch 200V 45A Power MOSFET mJ Avalanche current IAS *3 22.

5 A Junction temperature Tj

150 °C Range of storage temperature Tstg -55 to +150 °C PD 2.23 W Gate - Source voltage VGSS ?30 V PD

40 W Power dissipation Tc = 25°C Ta = 25°C Avalanche energy, single pulse EAS *3

160 Pulsed drain current ID,pulse *2 ?180 A Tc = 25°C Tc = 100°C Continuous drain current ID *1 A ?45 ID *1 ?24.4 A Drain - Source voltage VDSS

200 V Automotive Solenoid Drive Taping code - Marking RCX450N20 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit 6) 100% Avalanche tested lPackaging specifications Type Packaging Bulk lApplication Reel size (mm) - Switching Power Supply Tape width (mm) - Automotive Motor Drive Basic ordering unit (pcs)

500 lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ;

RoHS compliant lOutline VDSS 200V TO-220FM RDS(on) (Max.) 55mW ID 45A PD 40W *1 BODY DIODE (1) Gate (2) Drain (3) Source (1) (3) (2) 1/12 2013.04 - Rev.A RCX450N20 °C Soldering temperature, wavesoldering for 10s Tsold - -

265 °C/W Thermal resistance, junction - ambient RthJA - -

56 °C/W Thermal resistance, junction - case RthJC - - 3.12 S Static drain - source on - state resistance VGS = 10V, ID = 22.5A -

42 55 -

95 Forward transfer admittance VDS = 10V, ID = 22.5A

17 34 - gfs mA Gate - Source leakage current IGSS VGS = ?30V, VDS = 0V - - -

100 - VDS = 200V, VGS = 0V Tj = 125°C Values Unit Min. Typ. Max. lThermal resistance Parameter Symbol Symbol Conditions VGS = 0V, ID = 1.0mA lElectrical characteristics (Ta = 25°C) Parameter Drain - Source breakdown voltage V(BR)DSS Values V

200 - - Unit Min. Typ. Max. Gate threshold voltage VGS (th)

125 RDS(on) *4 Zero gate voltage drain current IDSS - - 1.0 VDS = 200V, VGS = 0V Tj = 25°C ?100 V mW VGS = 10V, ID = 22.5A Tj = 125°C nA VDS = 10V, ID = 1mA 3.0 - 5.0 2/12 2013.04 - Rev.A RCX450N20 *1 Limited only by maximum temperature allowed. *2 Pw ? 10ms, Duty cycle ? 1% *3 L ? 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C *4 Pulsed - - V ID = 45A VGS = 10V -

28 - Gate - Drain charge Qgd *4 -

28 - nC Gate - Source charge Qgs *4 Total gate charge Qg *4 VDD ? 100V - - lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Turn - on delay time td(on) *4 VDD ? 100V, VGS = 10V -

52 - ns Rise time tr *4 ID = 22.5A -

210 - Turn - off delay time td(off) *4 RL = 4.4W -

90 - Fall time tf *4 RG = 10W -

70 pF Output capacitance Coss VDS = 25V -

270 - Reverse transfer capacitance Crss f = 1MHz Input capacitance Ciss VGS = 0V -

4200 - -

160 - lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. nC

180 A Forward voltage VSD *4 VGS = 0V, IS = 45A - - 1.5 V

130 - ns Tc = 25°C Reverse recovery time trr *4 IS *1 - -

45 A Pulsed source current ISM *2 - - Continuous source current

80 - IS = 22.5A di/dt = 100A/ms Reverse recovery charge Qrr *4 -

600 - lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Gate plateau voltage V(plateau) VDD ? 100V, ID = 45A - 7.2 3/12 2013.04 - Rev.A RCX450N20 lElectrical characteristic curves

0 20

40 60

80 100

120 0

25 50

75 100

125 150

175 0.01 0.1

1 10 0.0001 0.001 0.01 0.1

1 10

100 1000 top D =

1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single Ta = 25?C Single Pulse Rth(j-c)(t) = r(t)*Rth(ch-c) Rth(j-c) = 56?C/W 0.01 0.1