PDF《MMBTA28 / PZTA28》

MMBTA28 / PZTA28 ― NPN Darlington Transistor ?

2001 Fairchild Semiconductor Corporation www.

fairchildsemi.com MMBTA28 / PZTA28 Rev. 1.4 February

2015 MMBTA28 / PZTA28 NPN Darlington Transistor Ordering Information Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Figure 1. MMBTA28 Device Package Figure 2. PZTA28 Device Package Part Number Top Mark Package Packing Method MMBTA28 3SS SSOT 3L Tape and Reel PZTA28 A28 SOT-223 4L Tape and Reel Symbol Parameter Value Unit VCEO Collector-Emitter Voltage

80 V VCBO Collector-Base Voltage

80 V VEBO Emitter-Base Voltage

12 V IC Collector Current - Continuous

800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C C B E SuperSOT-3 Mark: 3SS SOT-223 E B C C Description This device is designed for applications requiring extremely high current gain at collector currents to

500 mA. Sourced from process 03. MMBTA28 / PZTA28 ― NPN Darlington Transistor ?

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBTA28 / PZTA28 Rev. 1.4

2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Notes: 3. Device mounted on FR-4 PCB 36mm * 18mm * 1.5mm;

mounting pad for the collector lead minimum 6cm2 . 4. PCB size: FR-4,

76 mm x

114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics(5) Values are at TA = 25°C unless otherwise noted. Note: 5. Pulse test: pulse width ≤

300 μs, duty cycle ≤ 2%. Symbol Parameter Max. Unit MMBTA28(3) PZTA28(4) PD Total Device Dissipation

350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C RθJA Thermal Resistance, Junction-to-Ambient

357 125 °C/W Symbol Parameter Conditions Min. Max. Unit V(BR)CES Collector-Emitter Breakdown Voltage IC =

100 μA, VBE =

0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC =

100 μA, IE =

0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE =

10 μA, IC =

0 12 V ICBO Collector Cut-Off Current VCB =

60 V, IE =

0 100 nA ICES Collector Cut-Off Current VCE =

60 V, VBE =

0 500 nA IEBO Emitter Cut-Off Current VEB =

10 V, IC =

0 100 nA hFE DC Current Gain IC =

10 mA, VCE = 5.0 V

10000 IC =

100 mA, VCE = 5.0 V

10000 VCE(sat) Collector-Emitter Saturation Voltage IC =

10 mA, IB = 0.01 mA 1.2 V IC =

100 mA, IB = 0.1 mA 1.5 VBE(on) Base-Emitter On Voltage IC =

100 mA, VCE = 5.0 V 2.0 V fT Current Gain - Bandwidth Product IC =

10 mA, VCE = 5.0 V, f =

100 MHz

125 MHz Cobo Output Capacitance VCB = 1.0 V, IE = 0, f = 1.0 MHz 8.0 pF MMBTA28 / PZTA28 ― NPN Darlington Transistor ?

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBTA28 / PZTA28 Rev. 1.4

3 Typical Performance Characteristics Figure 3. Typical Pulsed Current Gain vs. Collector Current Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 7. Collector Cut-Off Current vs. Ambient Temperature Figure 8. Input and Output Capacitance vs. Reverse Voltage 0.001 0.01 0.1 0.2