PDF《PMV28UNEA》

PMV28UNEA

20 V, N-channel Trench MOSFET

10 March

2016 Product data sheet 1.

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSFET technology ? ElectroStatic Discharge (ESD) protection >

2 kV HBM ? AEC-Q101 qualified 3. Applications ? Relay driver ? High-speed line driver ? Low-side loadswitch ? Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - -

20 V VGS gate-source voltage Tj =

25 °C -8 -

8 V ID drain current VGS = 4.5 V;

Tamb =

25 °C [1] - - 4.7 A Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V;

ID = 4.7 A;

Tj =

25 °C -

24 32 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain

6 cm

2 . Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 2 /

16 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3 TO-236AB (SOT23) 017aaa255 G D S 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PMV28UNEA TO-236AB plastic surface-mounted package;

3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMV28UNEA EZ% [1] % = placeholder for manufacturing site code Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 3 /

16 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -

20 V VGS gate-source voltage Tj =

25 °C -8

8 V VGS = 4.5 V;

Tamb =

25 °C [1] - 4.7 A ID drain current VGS = 4.5 V;

Tamb =

100 °C [1] - 2.9 A IDM peak drain current Tamb =

25 °C;

single pulse;

tp ≤

10 ?s -

19 A EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) =

25 °C;

ID = 0.33 A;

DUT in avalanche (unclamped) - 3.3 mJ [2] -

510 mW Tamb =

25 °C [1] - 1.05 W Ptot total power dissipation Tsp =

25 °C - 3.9 W Tj junction temperature -55

150 °C Tamb ambient temperature -55

150 °C Tstg storage temperature -65

150 °C Source-drain diode IS source current Tamb =

25 °C [1] -

1 A ESD Maximum rating VESD electrostatic discharge voltage HBM [3] -

2000 V [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain

6 cm

2 . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 4 /

16 Tj (°C) -

75 175

125 25

75 -

25 017aaa123

40 80

120 Pder (%)

0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) -

75 175

125 25

75 -

25 017aaa124

40 80

120 Ider (%)

0 Fig. 2. Normalized continuous drain current as a function of junction temperature aaa-022088