PDF《PMV28UNEA》

Tj =

25 °C -

14 - ns Source-drain diode VSD source-drain voltage IS =

1 A;

VGS =

0 V;

Tj =

25 °C - 0.6 1.2 V Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 7 /

16 VDS (V)

0 5

4 2

3 1 aaa-022089

10 5

15 20 ID (A)

0 VGS = 1.2 V 1.3 V 1.4 V 1.5 V 1.6 V 1.8 V 2.5 V 4.5 V Tj =

25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage;

typical values aaa-022090 VGS (V)

0 1.5 1.0 0.5 10-4 10-5 10-3 ID (A) 10-6 min typ max Tj =

25 °C;

VDS =

5 V Fig. 7. Subthreshold drain current as a function of gate-source voltage ID (A)

0 20

15 5

10 aaa-022091

30 60

90 RDSon (mΩ)

0 VGS = 4.5 V 1.2 V 2.5 V 1.4 V 1.6 V 1.8 V

3 V Tj =

25 °C Fig. 8. Drain-source on-state resistance as a function of drain current;

typical values VGS (V)

0 8

6 2

4 aaa-022092

100 50

150 200 RDSon (mΩ)

0 Tj =

25 °C Tj =

150 °C ID = 4.7 A Fig. 9. Drain-source on-state resistance as a function of gate-source voltage;

typical values Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 8 /

16 VGS (V) 0.0 2.5 2.0 1.0 1.5 0.5 aaa-022093

10 5

15 20 ID (A)

0 Tj =

25 °C Tj =

150 °C VDS >

ID * RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage;

typical values Tj (°C) -60

180 120

0 60 aaa-022094 1.0 0.5 1.5

2 a

0 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature;

typical values Tj (°C) -60

180 120

0 60 aaa-022095 0.5 1.0 1.5 VGS(th) (V) 0.0 min typ max ID = 0.25 mA;

VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature aaa-022096 VDS (V) 10-1

102 10

1 102

103 C (pF)

10 Ciss Coss Crss f =

1 MHz;

VGS =

0 V Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage;

typical values Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 9 /

16 QG (nC)

0 8

6 2

4 aaa-022097

2 3

1 4

5 VGS (V)

0 ID = 4.7 A;

VDS =

10 V;

Tamb =

25 °C Fig. 14. Gate-source voltage as a function of gate charge;

typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. MOSFET transistor: Gate charge waveform definitions aaa-022098 VSD (V) 0.0 1.2 0.8 0.4

2 1

3 4 IS (A)

0 Tj =

25 °C Tj =

150 °C VGS =

0 V Fig. 16. Source current as a function of source-drain voltage;

typical values Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 10 /

16 11. Test information t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 17. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 11 /

16 12. Package outline References Outline version European projection Issue date IEC JEDEC JEITA SOT23 TO-236AB sot023_po 14-06-19 14-09-22 Plastic surface-mounted package;