PDF《PMV28UNEA》

1 10-1

10 102 ID (A) 10-2 VDS (V) 10-1

102 10

1 tp =

10 ?s

1 ms

10 ms

100 ms

100 ?s Limit RDSon = VDS/ID DC;

Tsp =

25 °C DC;

Tamb =

25 °C;

drain mounting pad

6 cm2 Fig. 3. Safe operating area;

junction to ambient;

continuous and peak drain currents as a function of drain- source voltage Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 5 /

16 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] -

211 245 K/W Rth(j-a) thermal resistance from junction to ambient in free air [2] -

102 120 K/W Rth(j-sp) thermal resistance from junction to solder point -

21 32 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain

6 cm

2 . aaa-021915 tp (s) 10-3

102 103

10 1 10-2 10-1

102 10

103 Zth(j-a) (K/W)

1 duty cycle =

1 0.75 0.50 0.33 0.25 0.20 0.10 0.05 0.02

0 0.01 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values aaa-021916 tp (s) 10-3

102 103

10 1 10-2 10-1

102 10

103 Zth(j-a) (K/W)

1 duty cycle =

1 0.75 0.50 0.33 0.20 0.25 0.10 0.05

0 0.02 0.01 FR4 PCB, mounting pad for drain

6 cm

2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values Nexperia PMV28UNEA

20 V, N-channel Trench MOSFET PMV28UNEA All information provided in this document is subject to legal disclaimers. Product data sheet

10 March

2016 6 /

16 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =

250 ?A;

VGS =

0 V;

Tj =

25 °C

20 - - V VGSth gate-source threshold voltage ID =

250 ?A;

VDS=VGS;

Tj =

25 °C 0.45 0.7

1 V IDSS drain leakage current VDS =

20 V;

VGS =

0 V;

Tj =

25 °C - -

1 ?A VGS =

8 V;

VDS =

0 V;

Tj =

25 °C - -

10 ?A VGS = -8 V;

VDS =

0 V;

Tj =

25 °C - - -10 ?A VGS = 4.5 V;

VDS =

0 V;

Tj =

25 °C - -

5 ?A VGS = -4.5 V;

VDS =

0 V;

Tj =

25 °C - - -5 ?A VGS = 2.5 V;

VDS =

0 V;

Tj =

25 °C - -

100 nA IGSS gate leakage current VGS = -2.5 V;

VDS =

0 V;

Tj =

25 °C - - -100 nA VGS = 4.5 V;

ID = 4.7 A;

Tj =

25 °C -

24 32 mΩ VGS = 4.5 V;

ID = 4.7 A;

Tj =

150 °C -

36 48 mΩ VGS = 2.5 V;

ID = 3.9 A;

Tj =

25 °C -

29 45 mΩ RDSon drain-source on-state resistance VGS = 1.8 V;

ID = 3.1 A;

Tj =

25 °C -

40 70 mΩ gfs forward transconductance VDS =

10 V;

ID = 4.7 A;

Tj =

25 °C -

30 - S RG gate resistance f =

1 MHz;

Tj =

25 °C -

7 - Ω Dynamic characteristics QG(tot) total gate charge - 6.2

10 nC QGS gate-source charge - 0.5 - nC QGD gate-drain charge VDS =

10 V;

ID = 4.7 A;

VGS = 4.5 V;

Tj =

25 °C - 1.4 - nC Ciss input capacitance -

490 - pF Coss output capacitance -

86 - pF Crss reverse transfer capacitance VDS =

10 V;

f =

1 MHz;

VGS =

0 V;

Tj =

25 °C -

70 - pF td(on) turn-on delay time -

8 - ns tr rise time -

35 - ns td(off) turn-off delay time -

39 - ns tf fall time VDS =

10 V;

ID = 4.7 A;

VGS = 4.5 V;

RG(ext) =

6 Ω;