PDF《BYT28 series》

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Product profile 1.1 General description Dual, common cathode, ultrafast, epitaxial rectifier diodes in the SOT78 (TO-220AB) leaded package. 1.2 Features and benefits 1.3 Applications ? Output rectifiers in high frequency switched-mode power supplies. 1.4 Quick reference data 2. Pinning information BYT28 series Dual rectifier diodes ultrafast Rev.

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3 November

2011 Product data sheet T O -

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0 A B ? Low forward voltage drop ? Fast switching ? Soft recovery characteristics ? High thermal cycling performance ? Low thermal resistance. ? VR ?

300 V (BYT28-300) ? IO(AV) ?

10 A ? VR ?

500 V (BYT28-500) ? trr ?

60 ns ? VF ? 1.05 V. Table 1. Pinning Pin Description Simplified outline Symbol

1 anode

1 SOT78

2 cathode

3 anode

2 mb mounting base;

connected to cathode

1 2 mb

3 sym084

3 1

2 BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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2011 2 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast 3. Ordering information 4. Limiting values [1] Neglecting switching and reverse current losses. 5. Thermal characteristics Table 2. Ordering information Type number Package Name Description Version BYT28-300 TO-220AB plastic single-ended package;

heatsink mounted;

1 mounting hole;

3-lead TO-220AB SOT78 BYT28-500 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage BYT28-300 -

300 V BYT28-500 -

500 V VR continuous reverse voltage BYT28-300 Tmb ?

147 ?C -

300 V BYT28-500 Tmb ?

147 ?C -

500 V IO(AV) average rectified output current both diodes conducting;

square wave;

? = 0.5;

Tmb ?

115 ?C [1] -

10 A IFSM non-repetitive peak forward current per diode t =

10 ms -

50 A t = 8.3 ms sinusoidal;

with reapplied VRRM(max) -

55 A Tstg storage temperature ?40 +150 ?C Tj junction temperature -

150 ?C Table 4. Characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base per diode;

see Figure

1 - - 4.5 K/W both diodes conducting - -

3 K/W Rth(j-a) thermal resistance from junction to ambient in free air -

60 - K/W BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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3 November

2011 3 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast 6. Characteristics Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse duration 001aab919 tp (s) 10?6

1 10 10?1 10?2 10?5 10?3 10?4 10?1 10?2

1 10 Zth(j-mb) (K/W) 10?3 δ = tp T t T Ptot tp Table 5. Characteristics Tj =

25 ?C;

unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Characteristics are per diode VF forward voltage IF =

5 A;

Tj =

150 ?C - 0.95 1.05 V IF =

10 A - 1.3 1.4 V IR reverse current VR = VRRM -

2 10 ?A VR = VRRM;

Tj =

100 ?C -

10 200 ?A QS reverse recovery charge IF =

2 A;

VR ?

30 V;

?dIF/dt =

20 A/?s;

see Figure

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50 60 nC trr reverse recovery time IF =

1 A;

VR ?

30 V;

?dIF/dt =

100 A/?s;

see Figure

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50 60 ns IRRM repetitive peak reverse current IF =

5 A;

VR ?

30 V;

?dIF/dt =

50 A/?s;

Tj =

100 ?C;

see Figure

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2 3 A Vfr forward recovery voltage IF =

1 A;

dIF/dt =