PDF《BYT28 series》

10 A/?s - 2.5 - V BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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2011 4 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast Fig 2. Reverse recovery definitions Fig 3. Forward recovery definitions Per diode. IF(AV) = IF(RMS) ? ??. Per diode. a = form factor = IF(RMS) / IF(AV). Fig 4. Forward power dissipation as a function of average forward current;

maximum values Fig 5. Forward power dissipation as a function of average forward current;

maximum values 001aab911 trr time

100 %

10 % IF dlF dt IR IRM Qr 001aab912 time time VFRM VF IF VF IF(AV) (A)

0 8

6 2

4 001aab913

4 6

2 8

10 PF (W)

0 Tmb(max) (°C)

105 150

114 118.5

123 127.5

132 136.5

141 145.5 δ = tp T t T I 0.5 0.2 0.1 δ = 1.0 tp IF(AV) (A)

0 5

4 2

3 1 001aab914

2 4

6 PF (W) Tmb(max) (°C)

0 a = 1.57 1.9 2.8

4 2.2

123 132 136.5 145.5 127.5

141 150 Vo = Rs = 0.945 V 0.021 Ω BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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3 November

2011 5 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast 7. Package information Epoxy meets UL94 V0 at 1?8 inch. Per diode. Per diode. Fig 6. Reverse recovery time as a function of time differential forward current;

maximum values Fig 7. Repetitive peak reverse current as a function of time differential forward current;

maximum values Per diode. Tj =

25 ?C. Fig 8. Forward current as a function of forward voltage Fig 9. Reverse recovery charge as a function of time differential forward current;

maximum values 001aab915

102 10

103 trr (ns)

1 ?dIF/dt (A/μs)

1 102

10 Tj = Tj =

25 °C

100 °C IF =

1 A IF =

5 A 001aab916

1 10?1

10 IRRM (A) 10?2 ?dIF/dt (A/μs)

1 102

10 Tj = Tj =

25 °C

100 °C IF =

1 A IF =

5 A IF =

5 A IF =

1 A VF (V)

0 1.5

1 0.5 001aab917

5 typ max

10 15 IF (A)

0 Tj = Tj =

25 °C

150 °C 001aab918

102 10

103 QS (nC)

1 ?dIF/dt (A/μs)

1 102

10 IF =

5 A IF =

2 A BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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2011 6 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast 8. Package outline Fig 10. Package outline SOT78 (SC-46) REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT78 SC-46 3-lead TO-220AB SOT78 08-04-23 08-06-13 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. UNIT A mm 4.7 4.1 1.40 1.25 0.9 0.6 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 15.0 12.8 3.30 2.79 3.8 3.5 A1 DIMENSIONS (mm are the original dimensions) Plastic single-ended package;

heatsink mounted;

1 mounting hole;

3-lead TO-220AB

0 5

10 mm scale b b1 (2) 1.6 1.0 c D 1.3 1.0 b2 (2) D1 E e 2.54 L L1 (1) L2 (1) max. 3.0 p q 3.0 2.7 Q 2.6 2.2 D D1 q p L

1 2

3 L1 (1) b1 (2) (3*) b2 (2) (2*) e e b(3*) A E A1 c Q L2 (1) mounting base BYT28_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

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2011 7 of

10 NXP Semiconductors BYT28 series Dual rectifier diodes ultrafast 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BYT28_SER v.5