PDF《IRFR220NPbF》

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1 12/10/04 IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET? Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m?) ID 200V

600 5.0A Typical SMPS Topologies l Telecom 48V input Forward Converters Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.5 A IDM Pulsed Drain Current ?

20 PD @TC = 25°C Power Dissipation

43 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ±

20 V dv/dt Peak Diode Recovery dv/dt ? 7.5 V/ns TJ Operating Junction and -55 to +

175 TSTG Storage Temperature Range Soldering Temperature, for

10 seconds

300 (1.6mm from case ) °C Absolute Maximum Ratings PD- 95063A Notes ? through ? are on page

10 D-Pak IRFR22ON I-Pak IRFU220N l Lead-Free IRFR/U220NPbF

2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.6 CCC CCC S VDS = 50V, ID = 2.9A Qg Total Gate Charge CCC

15 23 ID = 2.9A Qgs Gate-to-Source Charge CCC 2.4 3.6 nC VDS = 160V Qgd Gate-to-Drain ( Miller ) Charge CCC 6.1 9.2 VGS = 10V, td(on) Turn-On Delay Time CCC 6.4 CCC VDD = 100V tr Rise Time CCC

11 CCC ID = 2.9A td(off) Turn-Off Delay Time CCC

20 CCC RG = 24? tf Fall Time CCC

12 CCC VGS = 10V ? Ciss Input Capacitance CCC

300 CCC VGS = 0V Coss Output Capacitance CCC

53 CCC VDS = 25V Crss Reverse Transfer Capacitance CCC

15 CCC pF ? = 1.0MHz Coss Output Capacitance CCC

300 CCC VGS = 0V, VDS = 1.0V, ? = 1.0MHz Coss Output Capacitance CCC

23 CCC VGS = 0V, VDS = 160V, ? = 1.0MHz Coss eff. Effective Output Capacitance CCC

46 CCC VGS = 0V, VDS = 0V to 160V ? Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy? CCC

46 mJ IAR Avalanche Current? CCC 2.9 A EAR Repetitive Avalanche Energy? CCC 4.3 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) CCC CCC showing the ISM Pulsed Source Current integral reverse (Body Diode) ? CCC CCC p-n junction diode. VSD Diode Forward Voltage CCC CCC 1.3 V TJ = 25°C, IS = 2.9A, VGS = 0V ? trr Reverse Recovery Time CCC

90 140 ns TJ = 25°C, IF = 2.9A Qrr Reverse RecoveryCharge CCC

320 480 nC di/dt = 100A/?s ? ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 5.0

20 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage

200 CCC CCC V VGS = 0V, ID = 250?A ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient CCC 0.23 CCC V/°C Reference to 25°C, ID = 1mA ? RDS(on) Static Drain-to-Source On-Resistance CCC CCC

600 m? VGS = 10V, ID = 2.9A ? VGS(th) Gate Threshold Voltage 2.0 CCC 4.0 V VDS = VGS, ID = 250?A CCC CCC

25 ?A VDS = 200V, VGS = 0V CCC CCC

250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage CCC CCC

100 VGS = 20V Gate-to-Source Reverse Leakage

100 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJC Junction-to-Case CCC 3.5 RθJA Junction-to-Ambient (PCB mount)* CCC

50 °C/W RθJA Junction-to-Ambient CCC

110 Thermal Resistance IRFR/U220NPbF www.irf.com

3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 0.01 0.1