编辑: 梦里红妆 | 2019-07-04 |
1 10
100 0.1
1 10
100 20?s PULSE WIDTH T =
25 C J ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1
1 10
100 0.1
1 10
100 20?s PULSE WIDTH T =
175 C J ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 0.1
1 10
100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 V = 50V 20?s PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T =
25 C J ° T =
175 C J ° -60 -40 -20
0 20
40 60
80 100
120 140
160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) ° V = I = GS D 10V 4.8A IRFR/U220NPbF
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage
0 5
10 15
20 25
0 4
8 12
16 20 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I = D
13 2.9A V = 40V DS V = 100V DS V = 160V DS 0.1
1 10
100 0.4 0.6 0.8 1.0 1.2 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V =
0 V GS T =
25 C J ° T =
175 C J ° 0.1
1 10
100 1
10 100
1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T =
175 C =
25 C ° ° J C V , Drain-to-Source Voltage (V) I , Drain Current (A) I , Drain Current (A) DS D 10us 100us 1ms 10ms
1 10
100 1000 VDS, Drain-to-Source Voltage (V)
1 10
100 1000
10000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f =
1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds+ Cgd IRFR/U220NPbF www.irf.com
5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤
1 ?s Duty Factor ≤ 0.1 % RD VGS RG D.U.T. VGS + -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 0.01 0.1
1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T
1 2 J DM thJC C P t t DM
1 2 t , Rectangular Pulse Duration (sec) Thermal Response (Z )
1 thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)
25 50
75 100
125 150
175 0.0 1.0 2.0 3.0 4.0 5.0 T , Case Temperature ( C) I , Drain Current (A) ° C D IRFR/U220NPbF
6 www.irf.com
25 50
75 100
125 150
175 0
20 40
60 80 Starting T , Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ) J AS ° ID TOP BOTTOM 1.2A 2.1A 2.9A QG QGS QGD VG Charge D.U.T. VDS ID IG 3mA VGS .3?F 50K? .2?F 12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - Fig 13b. ........