DOC《附件2》

its surface is free of suspended bonds, which makes the use of high-k gate dielectric not degrade the carrier mobility;

the symmetrical conduction band and valence band for it contributes to the fabrication of high-performance complementary circuits;

its direct-band-gap structure enables the electronic and optoelectronic devices to be integrated on the same material platform. Compared to traditional metal-oxide-semiconductor FETs (MOSFETs), the CNTFET exhibits many superiorities such as the small device size, rapid operation speed and low power consume, which makes it hopeful to be utilized as a replacement for, or complement to, silicon-based devices in post-CMOS era to maintain the continuous advance of electronic industry. At present, the research on the CNTFET has made much progress (Changxin Chen, Yafei Zhang, The Open Nanoscience Journal, 2007,1:13-18;

Invited review paper). However, there are still many key problems to be overcome before realizing practical application of CNTFETs. Firstly, only individual SWCNTs were used as the channels mostly in previously reported CNTFETs, ........