PDF《QS5U28》

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20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristic curves Fig.5 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.6 Source Current vs. Source Drain Voltage Fig.7 Static Drain - Source On - State Resistance vs. Drain Current (I) Fig.8 Static Drain - Source On - State Resistance vs. Drain Current (II) www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Drain Current (III) Fig.10 Static Drain - Source On - State Resistance vs. Drain Current (IV) www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristic curves Fig.11 Forward Current vs. Forward Voltage Fig.12 Reverse Current vs. Reverse Voltage l lNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore, it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lDimensions www.rohm.com ?

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20130609 - Rev.001