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FN3926 Rev 0.

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12 April 9,

2012 FN3926 Rev 0.00 April 9,

2012 HA-2400/883 PRAM Four-Channel Programmable Operational Amplifier DATASHEET HA-2400/883 is a four-channel programmable amplifier providing a level of versatility unsurpassed by any other monolithic operational amplifier. Versatility is achieved by employing four input amplifier channels, any one (or none) of which may be electronically selected and connected to a single output stage through DTL/TTL compatible address inputs. The device formed by the output and the selected pair of inputs is an op amp which delivers excellent slew rate, gain bandwidth and power bandwidth performance. Other advantageous features for these dielectrically isolated amplifiers include high voltage gain and input impedance coupled with low input offset voltage and offset current. External compensation is not required on this device at closed loop gains greater than 10. Each channel of the HA-2400/883 can be controlled and operated with suitable feedback networks in any of the standard op amp configurations. This specialization makes these amplifiers excellent components for multiplexing, signal selection and mathematical function designs. With 20V/?s slew rate, 20MHz gain bandwidth and low input bias currents makes this device an ideal building block for signal generators, active filters and data acquisition designs. Programmability, coupled with 9mV typical offset voltage and 50nA offset current, makes these amplifiers outstanding components for signal conditioning circuits. Pin Configuration HA1-2400/883 (CERDIP) TOP VIEW) Features ? This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. ? Digital Programmability ? High Slew Rate - Uncompensated.20V/?s Min - Compensated 6V/?s Min ? Wide Gain Bandwidth - Uncompensated.20MHz Min - Compensated 4MHz Min ? High Gain.50kV/V ? Low Offset Current.50nA ? Single Capacitor Compensation for Unity Gain ? DTL/TTL Compatible Inputs Applications ? Single Selection/Multiplexing ? Op Amp Gain Stage ? Frequency Oscillator ? Filter Characteristics ? Add-Subtract Functions ? Integrator Characteristics ? Comparator Levels TRUTH TABLE D1 D0 EN SELECTED CHANNEL L L H

1 L H H

2 H L H

3 H H H

4 X X L None

14 15

16 9

13 12

11 10

1 2

3 4

5 7

6 8

3 OUTPUT AMP ENABLE D0 D1 GND COMP V+ OUT V-

4 1

2 +IN3 -IN3 +IN4 -IN4 -IN1 +IN1 +IN2 -IN2

3 DECODE CONTROL + - + - + - + - Ordering Information PART # PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # HA1-2400/883 HA1-2400/883 -55 to +125

16 Ld CERDIP F16.3 NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals 45V Differential Input Voltage VSUPPLY Voltage at Either Input Terminal.V+ to V- Digital Input Voltage.0.76V to +10V Peak Output Current (Short Circuit Protected)ISC <

±33mA) ESD Rating 2000V Recommended Operating Conditions Temperature Range 55°C to +125°C Supply Voltage 15V Negative Supply Voltage 15V Thermal Resistance (Typical) ?JA (°C/W) ?JC (°C/W) CerDIP Package (Note 1)91

25 Internal Power Dissipation Package Power Dissipation Limit at +75°C for TJ ≤ +175°C CerDIP Package 1.11W Package Power Dissipation Derating Factor Above +75°C CerDIP Package 11.1mW/°C Junction Temperature (TJ)175°C Storage Temperature Range.65°C to +150°C Maximum Lead Temperature (Soldering 10s)300°C CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 1. ?JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, RS = 100Ω , RL = 500kΩ, VO = 0V, unless otherwise specified. Digital Inputs: VIL = +0.5V, VIH = +2.4V, limits apply to each of the four channels, when addressed. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMP (°C) MIN MAX UNITS Offset Voltage VIO VCM = 0V

1 +25 -9

9 mV 2,

3 +125, -55 -11

11 mV Input Bias Current +IB VCM = 0V, +RS = 100kΩ, -RS = 100Ω

1 +25 -200

200 nA 2,

3 +125, -55 -400

400 nA -IB VCM = 0V, +RS = 100Ω, -RS = 100kΩ

1 +25 -200

200 nA 2,

3 +125, -55 -400

400 nA Input Offset Current IIO VCM = 0V, +RS = 100kΩ, -RS = 100kΩ

1 +25 -50

50 nA 2,

3 +125, -55 -100

100 nA Common Mode Range +CMR V+ = +6V, V- = -24V, VOUT = -9V

1 +25

9 - V 2,

3 +125, -55

9 - V -CMR V+ = +24V, V- = -6V, VOUT = +9V

1 +25 - -9 V 2,

3 +125, -55 - -9 V Large Signal Voltage Gain AV VOUT = -10V to +10V, RL = 2kΩ

4 +25

50 - kV/V 5,

6 +125, -55

25 - kV/V Common Mode Rejection Ratio +CMRR ?VCM = +5V, V+ = +10V, V- = -20V, VOUT = -5V

1 +25

80 - dB 2,

3 +125, -55

80 - dB -CMRR ?VCM = -5V, V+ = +20V, V- = -10V, VOUT = +5V

1 +25

80 - dB 2,

3 +125, -55

80 - dB Output Voltage Swing +VOUT RL = 2kΩ

4 +25

10 - V 5,

6 +125, -55

10 - V -VOUT RL = 2kΩ

4 +25 - -10 V 5,

6 +125, -55 - -10 V Output Current +IOUT VOUT = +10V

4 +25

10 - mA -IOUT VOUT = -10V

4 +25 - -10 mA HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Supply Current +ICC VOUT = 0V

1 +25 -

6 mA 2,

3 +125, -55 -

7 mA -ICC VOUT = 0V

1 +25 -6 - mA 2,

3 +125, -55 -7 - mA Power Supply Rejection Ratio +PSRR ?VSUP = ±5V V+ = +20V, V- = -15V V+ = +10V, V- = -15V

1 +25

74 - dB 2,

3 +125, -55

74 - dB -PSRR ?VSUP = ±5V V+ = +15V, V- = -20V V+ = +15V, V- = -10V

1 +25

74 - dB 2,

3 +125, -55

74 - dB Crosstalk CT VIN = ±10V

1 +25 -80 - dB Digital Logic Current IIL VIL = 0V

1 +25 - 1.5 mA 2,

3 +125, -55 - 1.5 mA IIH VIH = 5.0V

1 +25 -

1 ?A 2,

3 +125, -55 -

1 ?A TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: V+ = +15V, V- = -15V, RS = 100Ω , RL = 500kΩ, VO = 0V, unless otherwise specified. Digital Inputs: VIL = +0.5V, VIH = +2.4V, limits apply to each of the four channels, when addressed. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMP (°C) MIN MAX UNITS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: V+ = +15V, V- = -15V, RL = 2kΩ , CLOAD = 50pF, unless otherwise specified. Digital Inputs: VIL = +0.5V, VIH = +2.4V, limits apply to each of the four channels, when addressed. PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMP (°C) MIN MAX UNITS Slew Rate (Note 2) +SR1 VOUT = -5V to +5V

7 +25

6 - V/?s -SR1 VOUT = +5V to -5V

7 +25

6 - V/?s Rise and Fall Time tR1 VOUT =

0 to +200mV

7 +25 -

45 ns tF1 VOUT =

0 to -200mV

7 +25 -

45 ns Overshoot +OS1 VOUT =

0 to +200mV

7 +25 -

40 % -OS1 VOUT =

0 to -200mV

7 +25 -

40 % NOTES: 2. AV = +1, CCOMP = 15pF. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: V+ = ?15V, V- = -15V, unless otherwise specified. PARAMETER SYMBOL CONDITIONS NOTES TEMP (°C) MIN MAX UNITS Unity Gain Bandwidth UGBW1 AV = +1V, CCOMP = 15pF, RL = 2kΩ, CL = 50pF

3 +25

4 - MHz Gain Bandwidth Product GBWP2 AV = +10V, CCOMP = 0pF, RL = 2kΩ, CL = 50pF

3 +25

20 - MHz Full Power Bandwidth1 FPBW1 RL = 2kΩ, AV = +1V, VO = ±10V, CL = 50pF, CCOMP = 15pF 3,

4 +25

95 - kHz Full Power Bandwidth2 FPBW2 RL = 2kΩ, AV = +10V, VO = ±10V, CL = 50pF, CCOMP = 0pF 3,

4 +25

300 - kHz Settling Time TSET1 AV = +1V, CCOMP = 15pF, RL = 2kΩ, CL = 50pF, VO = 10VP-P, to 0.1% F.V., Logic Control = +5.0V

3 +25 - 2.5 ?s HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Slew Rate (Note 5) +SR2 VOUT = -5V to +5V, RL = 2kΩ, CL = 50pF, AV = +10V, CCOMP = 0pF

3 +25

20 - V/?s -SR2 VOUT = +5V to -5V, RL = 2kΩ, CL = 50pF, AV = +10V, CCOMP = 0pF

3 +25

20 - V/?s Output Delay TDEL RL = 2kΩ, CL = 50pF, CCOMP = 15pF, VIN = +5V

3 +25 -

250 ns Minimum Closed Loop Stability CLS1 RL = 2kΩ, CL = 50pF, CCOMP = 15pF

3 +25

1 - V/V CLS2 RL = 2kΩ, CL = 50pF, CCOMP = 0pF

3 +25

10 - V/V NOTES: 3. Parameters listed in Table

3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 4. FPBW = Slew Rate/(2?VPEAK). 5. AV = +10, CCOMP = 0pF. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: V+ = ?15V, V- = -15V, unless otherwise specified. PARAMETER SYMBOL CONDITIONS NOTES TEMP (°C) MIN MAX UNITS TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES

1 AND 2) Interim Electrical Parameters (Pre Burn-In)

1 Final Electrical Test Parameters

1 (Note 6), 2, 3, 4, 5, 6,

7 Group A Test Requirements 1, 2, 3, 4, 5, 6,

7 Groups C and D Endpoints

1 NOTES: 6. PDA applies to Subgroup

1 only. 7. The subgroup assignments of the parameters in these tables were patterned after DESC SMD #5962-87783. HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Test Circuit *Includes Stray Capacitance All Capacitors = ±10% (?F) All Resistors = ±1% (Ω) DUT Pin numbers refer to

14 Ld CerDIP package For detailed information, refer to AN514 Test Waveforms SLEW RATE WAVEFORMS OVERSHOOT, RISE AND FALL TIME WAVEFORMS HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Schematic Diagram Burn-In Circuit HA-2400/883 CERAMIC DIP NOTES: R1 = 100kΩ/socket, 5% 1/4W (min) C1 = C2 = 0.01?F per socket (min) or 0.1?F per row (min) C3 = 0.001?F per socket, 10% D1, D2 = 1N4002 or equivalent per board | (V+) - (V-) | = 30V f0 = 100kHz f1 = 50kHz 50% Duty Cycle f2 = 25kHz ENABLE GND OUT R2 2.4k R4 22.9k Q1 Q3 Q4 Q6 Q7 Q8 R1 1.6k R3 1.8k Q2 Q5 R5 8.0k R6 2.0k R35 1.6k R7 5.6k Q10 Q11 Q13 Q12 Q15 Q14 R8 4k Q16 R9 1.5k R10 10k R11 10k VA VC Q17 VB Q18 Q19 Q20 VD R12 1.6k Q28 VE R13 0.8k Q22 R15 10k R16 10k Q21 Q26 Q27 R14 10k Q29 Q23 Q24 Q25 Q30 Q32 Q33 Q102 Q34 Q38 R18 2.0k Q103 Q35 Q31 Q36 Q37 Q39 Q40 Q41 Q79 Q81 Q82 Q84 Q80 Q83 Q86 Q89 Q88 R35 0.75k Q85 Q98 Q92 R30 1.2k C1 9.0pF V+ Q93 Q42 R19 1.6k TO ADDITIONAL INPUT STAGES R29 0.4k Q90 Q91 R33 4k Q97 Q100 Q99 Q95 Q94 +VCC -VEE R31 36.5 R32

34 Q96 COMP

1 IN-

1 IN+ D1 D0 R17 1.6k Q87 R34 1.6k Q101 Q9 HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 Die Characteristics DIE DIMENSIONS: 88mils x 67mils x 19mils ± 1mil 2240?m x 1710?m?x 483?m ± 25.4?m METALLIZATION: Type: Al, 1% Cu Thickness: 16k? ??2k? GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12k? ? 2k? Nitride Thickness: 3.5k? ? 1.5k? WORST CASE CURRENT DENSITY: 0.7 x 105A/cm2 SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT:

251 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2400/883 HA-2400/883 FN3926 Rev 0.00 Page

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12 April 9,

2012 The information contained in this section has been developed through characterization and is for use as application and design aid only. These characteristics are not 100% tested and no product guarantee is implied. Typical Performance Characteristics Devices Characterized at: : VS = ?15V, VIL = +0.5V, VIH = +2.4V. Values apply to each of the four channels, when addressed PARAMETER TEST CONDITIONS TEMP. (°C) TYP UNITS Offset Voltage VCM = 0V +25

4 mV Bias Current VCM = 0V +25

50 nA Offset Current VCM = 0V +25

5 nA Input Resistance +25

30 MΩ Large Signal Voltage Gain RL = 2kΩ??VO = 20VP-P +25

150 kV/V Common Mode Rejection Ratio VCM = ?5VDC Full

100 dB Gain Bandwidth Product RL = 2kΩ, CL = 50pF, CCOMP = 0pF, AV = +10V +25

40 MHz Unity Gain Bandwidth RL = 2kΩ, CL = 50pF, CCOMP = 15pF, AV = +1V +25

8 MHz Output Voltage Swing RL = 2kΩ Full ?12 V Output Current VOUT = ±10V +25

20 mA FPBW1 VP = 10V (Note 8) +25

475 k........