PDF《JCS10N70H》

版本:201811I 1/11 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS10N70H 订货型号 Order codes 印记 Marking 封装 Package 有卤-条管 Halogen-Tube 无卤-条管 Halogen-Free-Tube 有卤-编带 Halogen-Reel 无卤-编带 Halogen-Free-Reel JCS10N70CH-C-B JCS10N70CH-C-BR N/A N/A JCS10N70CH TO-220C JCS10N70FH-F-B JCS10N70FH-F-BR N/A N/A JCS10N70FH TO-220MF JCS10N70FH-F2-B JCS10N70FH-F2-BR N/A N/A JCS10N70FH TO-220MF-K2 封装 Package 主要参数 MAIN CHARACTERISTICS ID 10A VDSS

700 V Rdson-max (@Vgs=10V) 1.

10 ? Qg-typ 38.0nC 用途 ? 高频开关电源 ? 电子镇流器 ? UPS 电源 APPLICATIONS ? High frequency switch mode power supply ? Electronic ballasts ? UPS 产品特性 ?低栅极电荷 ?低Crss (典型值 10pF) ?开关速度快 ?产品全部经过雪崩测试 ?高抗 dv/dt 能力 ?RoHS 产品 FEATURES ?Low gate charge ?Low Crss (typical 10pF ) ?Fast switching ?100% avalanche tested ?Improved dv/dt capability ?RoHS product 订货信息 ORDER MESSAGE JCS10N70H 版本:201811I 2/11 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 项目Parameter 符号Symbol 数值Value 单位Unit JCS10N70CH JCS10N70FH 最高漏极-源极直流电压 Drain-Source Voltage VDSS

700 700 V 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃

10 10* A 6.3 6.3* A 最大脉冲漏极电流(注1) Drain Current - pulse (note 1) IDM

40 40* A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注2) Single Pulsed Avalanche Energy(note 2) EAS

338 mJ 雪崩电流(注1) Avalanche Current(note 1) IAR

10 A 重复雪崩能量(注1) Repetitive Avalanche Energy(note 1) EAR 23.9 mJ 二极管反向恢复最大电压变化速率(注3) Peak Diode Recovery dv/dt(note 3) dv/dt

5 V/ns 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃

245 80 W 2.0 2.16 W/℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL

300 ℃ JCS10N70H 版本:201811I 3/11 电特性 ELECTRICAL CHARACTERISTICS 项目Parameter 符号Symbol 测试条件 Tests conditions 最小 Min 典型 Typ 最大Max 单位Units 关态特性 Off CCharacteristics 漏-源击穿电压 Drain-Source Voltage BVDSS ID=250μA, VGS=0V

700 - - V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ TJ ID=250μA, referenced to 25℃ - 0.73 - V/℃ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V, TC=25℃ - - 1.0 μA VDS=560V, TC=125℃ - -

100 μA 正向栅极体漏电流 Gate-body leakage current, Forward IGSSF VDS=0V, VGS =30V - -

100 nA 反向栅极体漏电流 Gate-body leakage current, Reverse IGSSR VDS=0V, VGS =-30V - - -100 nA 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=5A - 0.90 1.10 ? 正向跨导 Forward Transconductance gfs VDS = 40V, ID=5.0A (note 4) - 9.5 - S 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss VDS=25V, VGS =0V, f=1.0MHZ -

890 1300 pF 输出电容 Output capacitance Coss -

120 200 pF 反向传输电容 Reverse transfer capacitance Crss -

10 14 pF JCS10N70H 版本:201811I 4/11 电特性 ELECTRICAL CHARACTERISTICS 热特性 THERMAL CHARACTERISTIC 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) VDD=350V,ID=10A,RG=10? (note 4,5) - 37.3

50 ns 上升时间 Turn-On rise time tr - 97.6

131 ns 延迟时间 Turn-Off delay time td(off) -

88 115 ns 下降时间 Turn-Off Fall time tf -

52 67 ns 栅极电荷总量 Total Gate Charge Qg VDS =560V , ID=10A VGS =10V (note 4,5) 32.3

38 55 nC 栅-源电荷 Gate-Source charge Qgs 9.35

11 15 nC 栅-漏电荷 Gate-Drain charge Qgd 15.3

18 20 nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - -

10 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - -

40 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=10A - 0.93 1.40 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=10A dIF/dt=100A/μs (note 4) -

683 - ns 反向恢复电荷 Reverse recovery charge Qrr - 4.98 - μC 项目Parameter 符号Symbol 最大 Max 单位Unit JCS10N70CH JCS10N70FH 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 0.53 2.50 ℃/W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 58.0 ℃/W 注释: 1:脉冲宽度由最高结温限制 2:L=2.0mH, IAS=10A, VDD=50V, RG=25 ?,起始结 温TJ=25℃ 3:ISD ≤10A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=2.0mH, IAS=10A, VDD=50V, RG=25 ?,Starting TJ=25℃ 3:ISD ≤10A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature JCS10N70H 版本:201811I 5/11 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics JCS10N70H 版本:201811I 6/11 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area For JCS10N70CH Maximum Safe Operating Area For JCS10N70FH JCS10N70H 版本:201811I 7/11 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS10N70FH Normalized Gate Threshold Voltage vs. Temperature Maximum Avalanche Energy vs. Temperature Transient Thermal Response Curve For JCS10N70CH JCS10N70H 版本:201811I 8/11 外形尺寸 PACKAGE MECHANICAL DATA TO-220C 单位 Unit:mm JCS10N70H 版本:201811I 9/11 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 单位 Unit:mm JCS10N70H 版本:201811I 10/11 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF-K2 单位 Unit:mm JCS10N70H 版本:201811I 11/11 注意事项 1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实. 2.购买时请认清公司商标,如有疑问请与公 司本部联系. 3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性. 4.本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式 吉林华微电子股份有限公司 公司地址:吉林省吉林市深圳街

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