PDF《2SJ380》

2SJ380 2009-09-29

1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 -π-MOSV) 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications ? 4-V gate drive ? Low drain-source ON resistance: RDS (ON) = 0.

15 Ω (typ.) ? High forward transfer admittance: |Yfs| = 7.7 S (typ.) ? Low leakage current: IDSS = ?100 μA (max) (VDS = ?100 V) ? Enhancement mode: Vth = ?0.8 to ?2.0 V (VDS = ?10 V, ID = ?1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS ?100 V Drain-gate voltage (RGS =

20 kΩ) VDGR ?100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID ?12 Drain current Pulse (Note 1) IDP ?48 A Drain power dissipation (Tc = 25°C) PD

35 W Single pulse avalanche energy (Note 2) EAS

312 mJ Avalanche current IAR ?12 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch

150 °C Storage temperature range Tstg ?55 to

150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = ?25 V, Tch = 25°C (initial), L = 2.94 mH, RG =

25 Ω, IAR = ?12 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC D JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) 2SJ380 2009-09-29

2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS =

0 V ? ? ±10 μA Drain cut-off current IDSS VDS = ?100 V, VGS =

0 V ? ? ?100 μA Drain-source breakdown voltage V (BR) DSS ID = ?10 mA, VGS =

0 V ?100 ? ? V Gate threshold voltage Vth VDS = ?10 V, ID = ?1 mA ?0.8 ? ?2.0 V VGS = ?4 V, ID = ?6 A ? 0.25 0.32 Drain-source ON resistance RDS (ON) VGS = ?10 V, ID = ?6 A ? 0.15 0.21 Ω Forward transfer admittance ?Yfs? VDS = ?10 V, ID = ?6 A 4.5 7.7 ? S Input capacitance Ciss ?

1100 ? pF Reverse transfer capacitance Crss ?

200 ? pF Output capacitance Coss VDS = ?10 V, VGS =

0 V, f =

1 MHz ?

440 ? pF Rise time tr ?

18 ? Turn-on time ton ?

30 ? Fall time tf ?

18 ? Switching time Turn-off time toff Duty ≤ 1%, tw =

10 μs ?

65 ? ns Total gate charge (gate-source plus gate-drain) Qg ?

48 ? nC Gate-source charge Qgs ?

29 ? nC Gate-drain ( miller ) charge Qgd VDD ≈ ?80 V, VGS = ?10 V, ID = ?12 A ?

19 ? nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ? ? ? ?12 A Pulse drain reverse current (Note 1) IDRP ? ? ? ?48 A Forward voltage (diode) VDSF IDR = ?12 A, VGS =

0 V ? ? 1.7 V Reverse recovery time trr ?

160 ? ns Reverse recovery charge Qrr IDR = ?12 A, VGS =

0 V dIDR/dt =

50 A/μs ? 0.5 ? μC Marking ?10 V

0 V VGS R L = 8.3 Ω VDD ≈ ?50 V ID = ?6 A VOUT

50 Ω Lot No. Note

4 J380 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES >

MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of

27 January

2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2SJ380 2009-09-29

3 Drain-source voltage VDS (V) ID C VDS Drain current I D (A) Drain-source voltage VDS (V) ID C VDS Drain Current I D (A) ?10

0 0 ?8 ?20 ?10 ?4 ?4 ?12 ?16 Common source Tc = 25°C Pulse test ?2 ?6 ?8 ?2.5 ?3 ?4 ?6 ?8 VGS = ?2 V ?3.5 Drain-source voltage V DS (V) Gate-source voltage VGS (V) ID C VGS Drain current I D (A) Gate-source voltage VGS (V) VDS C VGS

0 0 ?1.6 ?0.8 ?3.2 ?2.4 ?4 ?8 ?12 ?16 ?20 ID = ?8 A ?4 ?2 Common source Tc = 25°C Pulse test ?6

0 0 ?1 ?2 ?3 ?5 ?6 ?4 ?2 ?4 ?8 ?10

25 100 Tc = ?55°C Common source VDS = ?10 V Pulse test Forward transfer admittance ? Y fs ? (S) Drain current ID (A) ?Yfs? C ID Drain current ID (A) RDS (ON) C ID DrainCsource ON resistance R DS (ON) ( Ω ) 0.03 ?0.1 ?20 ?1.0 ?0.3 ?10 Common source Tc = 25°C Pulse test 2.0 1.0 0.1 0.3 ?3 VGS = ?4 V ?10 0.05 0.5 ?10

0 0 ?2 ?5 ?2.0 ?1 ?3 ?4 Common source Tc = 25°C Pulse test ?0.4 ?1.2 ?1.6 VGS = ?2 V ?2.5 ?3 ?4 ?6 ?8 ?0.8 Tc = ?55°C

100 25

1 ?0.3 ?20 ?3 ?1.0 ?10

30 10

3 Common source VDS = ?10 V Pulse test

5 2SJ380 2009-09-29

4 Case temperature Tc (°C) RDS (ON) C Tc Drain-source ON resistance R DS (ON) ( Ω ) Drain-source voltage VDS (V) IDR C VDS Drain reverse current I DR (A) Gate threshold voltage V th (V) Drain-source voltage VDS (V) Capacitance C VDS Capacitance C (pF) Case temperature Tc (°C) Vth C Tc ?4

0 ?80

160 80 ?40

40 ?1 ?3

0 120 Common source VDS = ?10 V ID = ?1 mA Pulse test ?2 Drain power dissipation P D (W) Case temperature Tc (°C) PD C Tc Gate-source voltage V GS (V) Total gate charge Qg (nC) Dynamic Input/Output Characteristics Drain-source voltage V DS (V)

0 0

40 80

120 160

10 20

30 40

0 0 ?40 ?100

100 40 ?20 ?60 ?80

20 60

80 VDS VGS ?20 V VDD = ?80 V ?40 V

0 ?8 ?20 ?4 ?12 ?16 Common source ID = ?12 A Tc = 25°C Pulse test ?8

0 ?80

160 40 ?40

80 120 Common source Pulse test ID = ?8 A ?2, ?4 ?2 ?4 VGS = ?4 V VGS = ?10 V

0 0.1 0.2 0.3 0.4 0.5 ?0.3

0 1.0 0.8 0.2 Common source Tc = 25°C Pulse test 0,

1 ?1 VGS = ?10 V 0.6 ?1 ?3 ?10 ?30 0.4 ?2 ?3 ?5 ?0.5 ?5

30 ?0.1 ?100 ?10 ?0.3 Crss ?3

100 300

3000 ?1 Coss Ciss ?30 Common source VGS =

0 V f =

1 MHz Tc = 25°C

1000 5000

50 500 2SJ380 2009-09-29

5 rth C tw Pulse width tw (s) Normalized transient thermal impedance r th (t) /R th (ch-c) Avalanche energy E AS (mJ) Drain-source voltage VDS (V) Safe Operating Area Drain current I D (A) Channel temperature (initial) Tch (°C) EAS C Tch

0 25

200 500

150 75

100 300

400 50

100 125 Test circuit Wave form IAR BVDSS VDD VDS RG =

25 Ω VDD = ?25 V, L = 2.94 mH ? ? ? ? ? ? ? ? ? = V B B ・ ・L・I

2 1 Ε DD VDSS VDSS

2 AS ?15 V

15 V 0.003

100 m

10 m 0.01

1 1

10 0.005 0.3

3 0.03 0.5 0.05 0.1

10 μ

100 μ

1 m Duty = 0.5 0.02 0.2 0.1 0.05 Single pulse 0.01 T PDM t Duty = t/T Rth (ch-c) = 3.57°C/W ?0.1 ?1 ?3 ?10 ?30 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) IC max (pulsed)* VDSS max

1 ms*

10 ms*

100 μs* DC operation Tc = 25°C ?100 ?300 ?0.3 ?0.5 ?1 ?3 ?5 ?10 ?30 ?50 ?100 2SJ380 2009-09-29

6 RESTRICTIONS ON PRODUCT USE ? Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA ), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively P........