PDF《TEST REPORT》

TR022 Rev 0.

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27 November 10,

2015 TEST REPORT TR022 Rev 0.00 November 10,

2015 ISL72026SEH, ISL72027SEH, ISL72028SEH Total Dose Testing Introduction This report provides results of a total ionizing dose (TID) test of the ISL72026SEH, ISL72027SEH and ISL72028SEH Controller Area Network (CAN) transceivers. The test was conducted in order to determine the sensitivity of the parts to the total dose environment. Irradiations were performed to 75krad(Si) at 0.01rad(Si)/s under biased and grounded conditions and were followed by a biased anneal at +100°C for

168 hours. No rejects to the SMD parametric limits were encountered. Reference Documents ? MIL-STD-883 test method

1019 ? ISL72026SEH datasheet ? ISL72027SEH datasheet ? ISL72028SEH datasheet ? DLA Land and Maritime Standard Microcircuit Drawing (SMD) 5962-15228 Part Description The Intersil ISL7202xSEH product family consists of the ISL72026SEH, ISL72027SEH and ISL72028SEH, which differ in functionality as outlined in the following. These parts are 3.3V radiation tolerant Controller Area Network (CAN) transceivers that are compatible with the ISO11898-2 standard. Applications include serial communication in satellites and aerospace communications and telemetry data processing in harsh industrial environments. The transceiver can transmit and receive at bus speeds of up to 1Mbps. The devices are designed to operate over a common-mode range of -7V to +12V with a maximum of

120 nodes. The device has three discrete selectable driver rise/fall time options, a listen mode feature and a split termination output. The Receiver (RX) inputs feature a full fail-safe design, which ensures a logic high receiver output if the RX inputs are floating, shorted, or terminated but not driven. The ISL72027SEH is available in an

8 Ld hermetic ceramic flatpack and die form and operates over the -55°C to +125°C temperature range. The logic inputs are compatible with 5V systems as well as with 3.3V systems. The three parts use the same die and the specific functionality is selected by wire bonding diagram. The use of redundant bus transceivers is common in high reliability systems. In this arrangement, both active and quiescent devices can be present simultaneously on the bus with the quiescent devices powered down as cold spares. To support cold sparing, the powered-down ISL7202xSEH transceiver (VCC <

200mV) has a resistance between the VREF pin or the CANH pin or CANL pin and the VCC supply rail of >

480kΩ (max) with a typical resistance of >

2MΩ. The resistance between CANH and CANL of a powered down transceiver has a typical resistance of 80kΩ. The individual part descriptions are as follows: 1. ISL72026SEH: CAN transceiver, 1Mbps, listen mode, loopback 2. ISL72027SEH: CAN transceiver, 1Mbps, listen mode, split termination output 3. ISL72028SEH: CAN transceiver, 1Mbps, low power shutdown, split termination output The reader is referred to the relevant Intersil datasheet and other on-line information for further detail on the CAN protocol. Figures 1,

2 and

3 supply functional diagrams for all three variants, while Table

1 shows their pin assignments. FIGURE 1. ISL72026SEH FUNCTIONAL DIAGRAM FIGURE 2. ISL72027SEH FUNCTIONAL DIAGRAM FIGURE 3. ISL72028SEH FUNCTIONAL DIAGRAM

1 2

3 4

8 7

6 5 RS CANH CANL LBK D GND VCC R Tx DATA IN Rx DATA OUT CANH CANL ISL72026SEH 0.1?F VCC ?Controller

1 2

3 4

8 7

6 5 RS CANH CANL VREF D GND VCC R Tx DATA IN Rx DATA OUT CANH CANL ISL72027SEH 0.1?F VCC

1 2

3 4

8 7

6 5 RS CANH CANL VREF D GND VCC R Tx DATA IN Rx DATA OUT CANH CANL ISL72028SEH 0.1?F VCC ISL72026SEH, ISL72027SEH, ISL72028SEH TR022 Rev 0.00 Page

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2015 Total Dose Testing Test Description Irradiation Facilities Irradiations were performed using a Hopewell Designs N40 panoramic low dose rate 60Co irradiator located in the Palm Bay, Florida Intersil facility. The dose rate was 0.0089rad(Si)/s (8.9mrad(Si)/s), in accordance with MIL-STD-883 Method 1019. The irradiations used a PbAl spectrum hardening filter to shield the test board and devices under test against low energy secondary gamma radiation. Test Fixturing Figure

4 shows the configuration and power supply sequencing used for biased irradiation. TABLE 1. ISL72026SEH, ISL72027SEH AND ISL72028SEH PINOUTS PIN NUMBER ISL72026SEH ISL72027SEH ISL72028SEH PIN NAME

1 D D D

2 GND GND GND

3 VCC VCC VCC

4 R R R

5 LBK VREF VREF

6 CANL CANL CANL

7 CANH CANH CANH

8 RS RS RS Package lid Tied internally to pin

2 (GND) Tied internally to pin

2 (GND) Tied internally to pin

2 (GND) ISL72026SEH, ISL72027SEH, ISL72028SHE and ISL7202xSEH Radiation Schematic FIGURE 4. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL7202xSEH RS CANH CANL VREF LBK/ D GND R VCC (11) (12) (13) (14) VCC = 3.6V, +0.25V -0.0V POWER ON - ONE SUPPLY VOLTAGE GND VCC R1 C1 TP3 TP4 R4 DUT

1 2

3 4

5 6

7 8 R3 R2 TP1 TP2 UNNAMED_1_BANANAJACK_I328_IN1 UNNAMED_1_FP8_I401_PIN1 UNNAMED_1_FP8_I401_PIN4 UNNAMED_1_FP8_I401_PIN6 UNNAMED_1_FP8_I401_PIN7 UNNAMED_1_FP8_I401_PIN8 ISL72026SEH, ISL72027SEH, ISL72028SEH TR022 Rev 0.00 Page

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2015 Total Dose Testing Characterization Equipment and Procedures All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE) with datalogging of all parameters at each downpoint. All downpoint electrical testing was performed at room temperature. Experimental Matrix Testing proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019. The experimental matrix consisted of twelve samples irradiated under bias and twelve samples irradiated with all pins grounded for each of the three part types. Three control units were used. Samples of the ISL72026SEH, ISL72027SEH and ISL72028SEH were drawn from development lot J676671.1, wafer 02C1 and were packaged in the production hermetic 8-pin ceramic flatpack, package code KCR. The samples were processed through the standard burn-in cycle and were screened to SMD 5962-15228 limits at room, low and high temperatures before irradiation. Downpoints Downpoints were zero,

10 krad(Si),

30 krad(Si),

50 krad(Si) and

75 krad(Si). The samples were subjected to a high temperature biased anneal for

168 hours at +100°C following irradiation. Results Attributes Data Testing at low dose rate of the ISL72026SEH, ISL72027SEH and ISL72028SEH is complete and showed no reject devices after irradiation or anneal. Table

2 summarizes the results. TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA PART RATE BIAS SAMPLE SIZE DOWNPOINT BIN

1 (Note 1) REJECTS ISL72026SEH 0.0089rad(Si)/s Figure

4 12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0 75krad(Si)

12 0 Anneal,

168 hours at +100°C

12 0 ISL72026SEH 0.0089rad(Si)/s Grounded

12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0 75krad(Si)

12 0 Anneal,

168 hours at +100°C

12 0 ISL72027SEH 0.0089rad(Si)/s Figure

4 12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0

75 krad(Si)

12 0 Anneal,

168 hours at +100°C

12 0 ISL72027SEH 0.0089rad(Si)/s Grounded

12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0 75krad(Si)

12 0 Anneal,

168 hours at +100°C

12 0 ISL72026SEH, ISL72027SEH, ISL72028SEH TR022 Rev 0.00 Page

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27 November 10,

2015 Total Dose Testing ISL72028SEH 0.0089rad(Si)/s Figure

4 12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0 75krad(Si)

10 (Note 2)

0 Anneal,

168 hours at +100°C

10 (Note 2)

0 ISL72028SEH 0.0089rad(Si)/s Grounded

12 Pre-irradiation

12 10krad(Si)

12 0 30krad(Si)

12 0 50krad(Si)

12 0 75krad(Si)

10 (Note 2)

0 Anneal,

168 hours at +100°C

10 (Note 2)

0 NOTES: 1. Bin

1 indicates a device that passes all pre-irradiation specification limits. 2. Two samples were removed from the ISL72028SEH biased and grounded populations due to fixture capacity constraints, reducing the sample sizes to

10 each for the 75krad(Si) and anneal downpoints. TABLE 2. ISL72026SEH, ISL72027SEH AND ISL72028SEH LOW DOSE RATE TOTAL DOSE TEST ATTRIBUTES DATA PART RATE BIAS SAMPLE SIZE DOWNPOINT BIN

1 (Note 1) REJECTS ISL72026SEH, ISL72027SEH, ISL72028SEH TR022 Rev 0.00 Page

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27 November 10,

2015 Total Dose Testing Variables Data The plots in Figures

5 through

43 show data at all downpoints. The plots show the average of key parameters as a function of total dose for each of the two irradiation conditions. Most of the plots show a number of parameters on the same set of axes in an attempt to manage the length of this report. All data shown was taken at a supply voltage of 3.0V;

the 3.6V supply data showed similar stability and is not plotted. The figure sequence and the symbols of the reported parameters are consistent with those used in the SMD. All parameters showed excellent stability over irradiation. See Conclusion on page 25. for further discussion. Note also that nearly all of the figures show the TID response of several variants, which generally led to busy plots. Most of the figures report data for all three variants on the same set of axes;

the eight figures reporting one or two variants are listed in the following for reference. Figure 15: ISL72026SEH and ISL72027SEH, input threshold voltage in listen mode. Figure 16: ISL72026SEH and ISL72027SEH, input hysteresis voltage in listen mode. Figure 24: ISL72026SEH and ISL72027SEH, supply current in listen mode. Figure 25: ISL72028SEH, supply current in low power shutdown mode. Figure 30: ISL72027SEH and ISL72028SEH, VREF cold sparing leakage current. Figure 40: ISL72026SEH, loopback delay, input to receiver output. Figure 41: ISL72027SEH and ISL72028SEH, VREF pin voltage, 5?A sourcing and sinking. Figure 42: ISL72027SEH and ISL72028SEH, VREF pin voltage, 50?A sourcing and sinking. Variables Data Plots FIGURE 5. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter dominant bus output voltage (VO(DOM)) for 3.0V supply, D = 0V, RS = 0V and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 2.25V to 3.0V (CAN High) and 0.1V to 1.25V (CAN Low).

0 0.5

1 1.5

2 2.5

3 3.5

0 25

50 75

100 Total dose, krad(Si) at 0.01r ad(Si)/s ISL72026 Vo(dom), CANH, grounded ISL72026 Vo(dom), CANH, biased ISL72027 Vo(dom), CANH, grounded ISL72027 Vo(dom), CANH, biased ISL72028 Vo(dom), CANH, grounded ISL72028 Vo(dom), CANH, biased ISL72026 Vo(dom), CANL, grounded ISL72026 Vo(dom), CANL, biased ISL72027 Vo(dom), CANL, grounded ISL72027 Vo(dom), CANL, biased ISL72028 Vo(dom), CANL, grounded ISL72028 Vo(dom), CANL, biased Spec limit, CANH Spec limit, CANH Spec limit, CANL Spec limit, CANL ANNEAL Bus output voltage, dominant, V ISL72026SEH, ISL72027SEH, ISL72028SEH TR022 Rev 0.00 Page

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2015 Total Dose Testing FIGURE 6. ISL72026SEH, ISL72027SEH and ISL72028SEH transmitter recessive bus output voltage (VO(REC)) for 3.0V supply, D = 3.0V, RS = 0V and CAN HIGH and LOW as a function of low dose rate irradiation for the biased (per Figure 4) and unbiased (all pins grounded) cases. The dose rate was 0.0089rad(Si)/s and the sample size for each of the six cells was 12. The post-irradiation SMD limits are 1.8V to 2.7V........