编辑: 紫甘兰 | 2013-10-16 |
90 °C/W 热阻(Junction to Case) θJc ESOP16
11 °C/W MIX2908 7W 内置升压单声道防破音 D 类音频放大器 Shanghai Mixinno Microelectronics Co., Ltd 4?/?8? Rev 1.2 May.
2016 Boost Module and D MODE Electrical Characteristics (AVDD=3.6V, PVDD =7.2V, Gain=20dB, RL =4?, T =25°C, unless otherwise noted.) Symbol Parameter Test Conditions MIN TYP MAX UNIT AVDD Supply Voltage 3.0 - 6.0 V PO Output Power THD+N=10%,f=1KHZ,RL=4 ? PVDD=7.2V 6.7 W PVDD=6.0V
4 THD+N=1%,f=1KHZ,RL=4 ? PVDD=7.2V 5.8 W PVDD=6.0V 3.5 THD+N Total Harmonic Distortion Plus Noise PVDD=7.2V, PO=2W, RL=4 ? f=1KHz 0.05 % PVDD=6.0V, PO=1W, RL=4 ? 0.05 GV Gain Ri = 33K 19.5 dB PSRR Power Supply Ripple Rejection AVDD=3.6V±200mVp-p f=1KHz
60 dB SNR Signal-to-Noise Ratio AVDD=3.6V, PVDD=7.2V, f=1KHz
85 dB Vn Output Noise AVDD=3.6V,Input floating with CIN=0.1μF A-weighting
100 μV No A-weighting
150 Dyn Dynamic Range AVDD=5.0V,THD=1% f=1KHz
90 dB η Efficiency RL=4 ?, Po=5W
80 % IQ Quiescent Current AVDD=5.0V No Load Boost ON
25 mA AVDD=3.0V
20 ISD Shutdown Current AVDD=3V to 6V VENB=VENA=0V
10 μA Vos Offset Voltage VIN=0V, AVDD=3.6V
10 mV Fosc Oscillator Frequency
420 khz Tst Setup Time Bypass capacitor =1uF
300 mS OTP - No Load, Junction Temperature VDD=5.0V
180 °C OTH -
40 Boost Module Electrical Characteristics Symbol Parameter Test Conditions MIN TYP MAX UNIT Fsw Boost Frequency AVDD=3.6V
1 MHz Vfb Boost feedback Voltage AVDD=3.6V 1.19 1.23 1.27 V Ilim Boost input current limit AVDD=3.6V 5.5 A ISDB Boost Shutdown Current AVDD=3.6V
3 uA IQB Boost Quiescent Current AVDD=3.6V
1 mA MIX2908 7W 内置升压单声道防破音 D 类音频放大器 Shanghai Mixinno Microelectronics Co., Ltd 5?/?8? Rev 1.2 May.
2016 Typical Operating Characteristics (AVDD =3.6V,PVDD=7.2V,Gain=20dB, RL =4?, T =25°C, unless otherwise noted.) THD+N vs Output Power Noise Floor FFT THD+N VS FREQUENCY Frequency Response 0.008
20 0.02 0.1
1 5 % 4m
8 10m 100m 500m
1 2
5 W -120 -40 -100 -80 -60 d B V
10 20k
20 50
100 200
500 1k 2k 5k 10k Hz 0.01
5 0.02 0.05 0.1 0.2 0.5
1 2 %
20 20k
50 100
200 500 1k 2k 5k Hz +14 +22 +15 +16 +17 +18 +19 +20 +21 d B g A
20 20k
50 100
200 500 1k 2k 5k Hz RL=4ohm Gain=20dB PVDD= 3.6V, 5V, 7.2V RL=4ohm Gain=20dB RL=4ohm Gain=20.5dB Cin=0.1uF Rin=47K RL=4ohm Gain=20dB Vo=1Vp\p? MIX2908 7W 内置升压单声道防破音 D 类音频放大器 Shanghai Mixinno Microelectronics Co., Ltd 6?/?8? Rev 1.2 May.
2016 应用信息 输入电阻(Ri) MIX2908的增益由音量调节控制的输入电阻(RI)和反 馈电阻RF)控制.有如下的增益计算公式: Av =
2 X ( ) 其中, Re为芯片外部的可调节输入电阻;
反馈电阻 Rf为220K(反馈电阻为内部固定,不可外部调节). 例如,外部输入电阻为47K,则放大倍数为: Av = 2X220 / (47) = 9.4倍=19.4 dB 输入电容 (Ci ) 输入电容与输入电阻构成一个高通滤波器,其截止频 率可由下试得出: fc =
1 2πRiCi Ci的值不仅会影响到电路的低频响应,而且也会影响 电路启动和关断时所产生的POP声,输入电容越大, 则到达其稳定工作点所需的电荷越多,在同等条件下, 小的输入电容所产生的POP声比较小. ENB管脚控制 ENB管脚为芯片的升压使能管脚.通过控制ENB管脚 的电压,升压模块可以单独打开和关闭.当ENB管脚 为低电平时, 升压模块关闭, 当ENB管脚为高电平时, 升压模块工作. ENA管脚和防破音模式控制 ENA管脚控制芯片的启动,同时控制防破音模式的开 启和关闭.当ENA管脚电压在1/5 PVDD以下时,芯片 关断,功耗小于10uA;