PDF《FR70K05 thru FR70MR05》

VRRM =

800 V -

1000 V IF =

70 A Features ? High Surge Capability DO-5 Package ? Not ESD Sensitive Note: 1.

Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol FR70K(R)05 Unit Repetitive peak reverse voltage VRRM

800 V RMS reverse voltage VRMS

560 V DC blocking voltage VDC

800 V Continuous forward current IF

70 A Operating temperature Tj -55 to

150 °C Storage temperature Tstg -55 to

150 °C Parameter Symbol FR70K(R)05 Unit Diode forward voltage 1.0

25 μA

15 mA Recovery Time Maximum reverse recovery time TRR

500 nS IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR =

100 V, Tj =

125 °C V 1.0

25 15

500 FR70K05 thru FR70MR05 VR =

100 V, Tj =

25 °C IF =

70 A, Tj =

25 °C TC ≤

100 °C Conditions

870 Maximum ratings, at Tj =

25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions TC =

25 °C, tp = 8.3 ms FR70M(R)05

1000 700

1000 70 Reverse current IR VF 2. Reverse polarity (R): Stud is anode. ? Types from

800 V to

1000 V VRRM FR70M(R)05 -55 to

150 Silicon Fast Recovery Diode Electrical characteristics, at Tj =

25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A

870 -55 to

150 1 Oct.

2018 http://www.diodemodule.com/silicon_products/studs/fr70k05.pdf FR70K05 thru FR70MR05

2 Oct.

2018 http://www.diodemodule.com/silicon_products/studs/fr70k05.pdf Package dimensions and terminal configuration Product is marked with part number and terminal configuration. FR70K05 thru FR70MR05

3 Oct.

2018 http://www.diodemodule.com/silicon_products/studs/fr70k05.pdf