PDF《AO4840》

AO4840 40V Dual N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 6A RDS(ON) (at VGS=10V) < 30m? RDS(ON) (at VGS=4.

5V) < 38m? 100% UIS Tested 100% Rg Tested Symbol VDS The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. V Maximum Units Parameter Absolute Maximum Ratings TA=25° C unless otherwise noted 40V Drain-Source Voltage

40 G2 D2 S2 G1 D1 S1 G1 S1 G2 S2 D1 D1 D2 D2

2 4

5 1

3 8

6 7 Top View SOIC-8 Top View Bottom View Pin1 VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL mJ Junction and Storage Temperature Range -55 to

150 ° C Power Dissipation B PD Avalanche energy L=0.1mH C

74 62.5 A ID

6 Units Thermal Characteristics Parameter Typ Max V Drain-Source Voltage

40 Pulsed Drain Current C Continuous Drain Current TA=70° C 1.3 V ±20 Gate-Source Voltage

5 30

32 90

10 A

14 TA=25° C TA=70° C ° C/W RθJA

48 40 Maximum Junction-to-Ambient A TA=25° C Avalanche Current C W

2 Maximum Junction-to-Lead ° C/W ° C/W Maximum Junction-to-Ambient A D Rev 5: August

2011 www.aosmd.com Page

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5 AO4840 Symbol Min Typ Max Units BVDSS

40 V VDS=40V, VGS=0V

1 TJ=55° C

5 IGSS

100 nA VGS(th) Gate Threshold Voltage 1.7 2.5

3 V ID(ON)

30 A

24 30 TJ=125° C

36 45

30 38 m? gFS

27 S VSD 0.76

1 V IS

2 A Ciss

410 516

650 pF Coss

55 82

110 pF Crss

25 43

60 pF Rg 2.3 4.6 6.9 ? Qg(10V) 8.9 10.8 nC Qg(4.5V) 4.3 5.6 nC Qgs 2.4 nC Qgd 1.4 nC tD(on) 6.4 ns t 3.6 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =10V, V =20V, R =3.3?, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=20V, ID=6A Gate Source Charge Gate Drain Charge Total Gate Charge RDS(ON) Static Drain-Source On-Resistance m? IS=1A,VGS=0V VDS=5V, ID=6A VGS=4.5V, ID=5A VDS=VGS ID=250?A VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS ?A Drain-Source Breakdown Voltage On state drain current ID=250?A, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=6A Reverse Transfer Capacitance VGS=0V, VDS=20V, f=1MHz SWITCHING PARAMETERS tr 3.6 ns tD(off) 16.2 ns tf 6.6 ns trr

18 24 ns Qrr

10 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/?s Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=20V, RL=3.3?, RGEN=3? Turn-Off Fall Time Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/?s A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures