PDF《Nanoscale》

55 the g-C3N4 based nanocomposites. Neverthess, not all materials can couple with g-C3N4 to form a heterostructures. The most important prerequisite condition to form an effective visible light excited g-C3N4 based heterostructure is that the candidates should have an appropriate band structure which is beneficial to create a

60 coupling hybridization. Besides, the difference of chemical potential between the coupling semiconductor A and B generates band bending at the interface of junction. The band bending induces a built-in field, which impels the photogenerated electrons and holes to transfer in opposite directions, resulting in

65 a spatially efficient separation of the electrons and holes pairs on different sides of heterojunction.48,49 In addition, the crystal structure in the junction domain of the heterostructure is also important in strengthening the quantum efficiency of the photocatalyst. A distinction in lattice spacing between two

70 semiconductors could probably cause lattice mismatch. The lattice mismatch at the interface may cause defects, which will capture the photo-generated electronic carriers and thus inhibit the diffusion of electrons and holes. Thus, the formation of g- C3N4 based heterostructures is an effective approach to enhance

75 charge separation efficiency for improved photocatalytic performance. Recently, numerous researches have been made to couple g- C3N4 with various semiconductors to enhance the photocatalytic activities.36,50-51 For instances, Wang and co-workers firstly

80 reported TiN/g-C3N4 multi-layers hybridization by using a dual- facing-target magnetron sputtering method ........