PDF《BUK9Y30-75B》

04 ―

10 April

2008 3 of

13 Nexperia BUK9Y30-75B N-channel TrenchMOS logic level FET Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Single-shot and repetitive avalanche rating;

avalanche current as a function of avalanche period 03no16

0 10

20 30

40 0

50 100

150 200 Tmb (°C) ID (A) Tmb (°C)

0 200

150 50

100 03na19

40 80

120 Pder (%)

0 VGS ? 5V Pder = Ptot Ptot(25°C) *

100 % 03np81 10-1

1 10

102 10-3 10-2 10-1

1 10 tAV (ms) IAV (A) (1) (2) (3) (1) Singleípulse;

Tj =

25 °C. (2) Singleípulse;

Tj =

150 °C. (3) Repetitive. BUK9Y30-75B_4 Product data sheet Rev.

04 ―

10 April

2008 4 of

13 Nexperia BUK9Y30-75B N-channel TrenchMOS logic level FET 5. Thermal characteristics Fig 4. Safe operating area;

continuous and peak drain currents as a function of drain-source voltage 03no14 10-1

1 10

102 103

1 10

102 VDS (V) ID (A) Limit RDSon = VDS / ID DC tp =

10 μs

100 μs

1 ms

10 ms

100 ms Tmb =

25 °C;

IDM is single pulse Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure

5 - - 1.8 K/W Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 03nm01 10-2 10-1

1 10 10-6 10-5 10-4 10-3 10-2 10-1

1 tp (s) Zth (j-mb) (K/W) δ = 0.5 0.2 0.1 0.05 single shot 0.02 tp T P t tp T δ = BUK9Y30-75B_4 Product data sheet Rev.

04 ―

10 April

2008 5 of

13 Nexperia BUK9Y30-75B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA;

VGS =

0 V;

Tj =

25 °C

75 - - V ID = 0.25 mA;

VGS =

0 V;

Tj = -55 °C

70 - - V VGS(th) gate-source threshold voltage ID =

1 mA;

VDS = VGS;

Tj =

175 °C;

see Figure

11 0.5 - - V ID =

1 mA;

VDS = VGS;

Tj =

25 °C;

see Figure

11 1.1 1.5

2 V ID =

1 mA;

VDS = VGS;

Tj = -55 °C;

see Figure

11 - - 2.3 V IDSS drain leakage current VDS =

75 V;

VGS =

0 V;

Tj =

175 °C - -

500 μA VDS =

75 V;

VGS =

0 V;

Tj =

25 °C - 0.02

1 μA IGSS gate leakage current VDS =

0 V;

VGS = +15 V;

Tj =

25 °C -

2 100 nA VDS =

0 V;

VGS = -15 V;

Tj =

25 °C -

2 100 nA RDSon drain-source on-state resistance VGS = 4.5 V;

ID =

15 A;

Tj =

25 °C - -

34 mΩ VGS =

5 V;

ID =

15 A;

Tj =

175 °C;

see Figure

12 and

13 - -

72 mΩ VGS =

5 V;

ID =

25 A;

Tj =

25 °C -

27 32 mΩ VGS =

5 V;

ID =

15 A;

Tj =

25 °C;

see Figure

12 and

13 -

25 30 mΩ VGS =

10 V;

ID =

15 A;

Tj =

25 °C -

23 28 mΩ Source-drain diode VSD source-drain voltage IS =

25 A;

VGS =

0 V;

Tj =

25 °C;

see Figure

16 - 0.85 1.2 V trr reverse recovery time IS =

20 A;

dIS/dt = -100 A/μs;

VGS = -10 V;

VDS =

30 V;

Tj =

25 °C -

101 - ns Qr recovered charge -

115 - nC Dynamic characteristics QG(tot) total gate charge ID =

25 A;

VDS =

60 V;

VGS =

5 V;

Tj =

25 °C;

see Figure

14 -

19 - nC QGS gate-source charge -

5 - nC QGD gate-drain charge -

9 - nC Ciss input capacitance VGS =

0 V;

VDS =

25 V;

f =

1 MHz;

Tj =

25 °C;

see Figure