PDF《PMV30ENEA》

PMV30ENEA

40 V N-channel Trench MOSFET

2 April

2019 Product data sheet 1.

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Extended temperature range Tj =

175 °C ? Trench MOSFET technology ? ElectroStatic Discharge (ESD) protection >

2 kV HBM (class H2) ? AEC-Q101 qualified 3. Applications ? Relay driver ? High-speed line driver ? Low-side load switch ? Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - -

40 V VGS gate-source voltage Tj =

25 °C -20 -

20 V ID drain current VGS =

10 V;

Tamb =

25 °C [1] - - 4.8 A Static characteristics RDSon drain-source on-state resistance VGS =

10 V;

ID = 4.8 A;

Tj =

25 °C -

23 30 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . Nexperia PMV30ENEA

40 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3 TO-236AB (SOT23) 017aaa255 G D S 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PMV30ENEA TO-236AB plastic surface-mounted package;

3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PMV30ENEA R6% [1] % = placeholder for manufacturing site code PMV30ENEA All information provided in this document is subject to legal disclaimers. ? Nexperia B.V. 2019. All rights reserved Product data sheet

2 April

2019 2 /

14 Nexperia PMV30ENEA

40 V N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage -

40 V VGS gate-source voltage Tj =

25 °C -20

20 V VGS =

10 V;

Tamb =

25 °C [1] - 4.8 A ID drain current VGS =

10 V;

Tamb =

100 °C [1] - 3.4 A IDM peak drain current Tamb =

25 °C;

single pulse;

tp ≤

10 ?s -

19 A [2] -

710 mW Tamb =

25 °C [1] - 1.3 W Ptot total power dissipation Tsp =

25 °C - 8.3 W Tj junction temperature -55

175 °C Tamb ambient temperature -55

175 °C Tstg storage temperature -65

175 °C Source-drain diode IS source current Tamb =

25 °C [1] - 1.3 A ESD maximum rating VESD electrostatic discharge voltage HBM [3] -

2000 V Avalanche ruggedness EDS(AL)S non-repetitive drain- source avalanche energy Tj(init) =

25 °C;

ID = 0.83 A;

DUT in avalanche (unclamped) - 16.7 mJ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. Tj (°C) -75

225 125

25 aaa-026120

40 80

120 Pder (%)

0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) -75

225 125

25 aaa-026121

40 80

120 Ider (%)

0 Fig. 2. Normalized continuous drain current as a function of junction temperature PMV30ENEA All information provided in this document is subject to legal disclaimers. ? Nexperia B.V. 2019. All rights reserved Product data sheet

2 April

2019 3 /

14 Nexperia PMV30ENEA

40 V N-channel Trench MOSFET aaa-029751 VDS (V) 10-1