PDF《IXFR90N30》

?

2013 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

75 A IDM TC = 25°C, Pulse Width Limited by TJM

360 A IA TC = 25°C

90 A EAS TC = 25°C

3 J dv/dt IS ≤ IDM , VDD ≤ VDSS , TJ ≤ 150°C

5 V/ns PD TC = 25°C

417 W TJ -

55 .

.. +150 °C TJM

150 °C Tstg -

55 ... +150 °C TL Maximum Lead Temperature for Soldering

300 °C TSOLD Plastic Body for 10s

260 °C VISOL 50/60 Hz,

1 Minute

2500 V~ FC Mounting Force 20..120/4.5..27 N/lb Weight

5 g DS98764A(6/13) Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA

300 V VGS(th) VDS = VGS , ID = 4mA 2.0 4.5 V IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS , VGS = 0V

100 μA TJ = 125°C

2 mA RDS(on) VGS = 10V, ID = 45A, Note

1 36 mΩ HiPerFETTM Power MOSFET IXFR90N30 VDSS = 300V ID25 = 75A RDS(on) ≤ ≤ ≤ ≤ ≤ 36mΩ Ω Ω Ω Ω trr ≤ ≤ ≤ ≤ ≤ 250ns Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC & DC Motor Controls G = Gate D = Drain S = Source ISOPLUS247 E153432 G S D Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier (Electrically Isolated Tab) IXFR90N30 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. gfs VDS = 10V, ID = 45A, Note

1 40

70 S Ciss

10 nF Coss VGS = 0V, VDS = 25V, f = 1MHz

1800 pF Crss

700 pF td(on)

42 ns tr

55 ns td(off)

100 ns tf

40 ns Qg(on)

360 nC Qgs VGS = 10V, VDS = 0.5 ? VDSS , ID = 45A

60 nC Qgd

180 nC RthJC 0.30 °C/W RthCS 0.15 °C/W Resistive Switching Times VGS = 10V, VDS = 0.5 ? VDSS , ID = 45A RG = 2Ω (External) Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. IS VGS = 0V

90 A ISM Repetitive, Pulse Width Limited by TJM

360 A VSD IF = 45A, VGS = 0V, Note

1 1.5 V trr

250 ns QRM 1.4 μC IRM

10 A IF = 50A, -di/dt = -100A/μs VR = -100V, VGS = 0V ISOPLUS247 (IXFR) Outline

1 - Gate

2 - Drain

3 - Source