PDF《AO3401A》

AO3401A 30V P-Channel MOSFET General Description Product Summary VDS ID (at VGS=-10V) -4.

0A RDS(ON) (at VGS=-10V) < 50m? RDS(ON) (at VGS =-4.5V) < 60m? RDS(ON) (at VGS=-2.5V) < 85m? Symbol VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL ° C/W RθJA

70 100

90 0.9 TA=70° C Junction and Storage Temperature Range -55 to

150 ° C Thermal Characteristics Units Parameter Typ Max Absolute Maximum Ratings TA=25° C unless otherwise noted -30V Drain-Source Voltage -30 The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. V Maximum Units Parameter TA=70° C Power Dissipation B PD Pulsed Drain Current C Continuous Drain Current TA=25° C ID V ±12 Gate-Source Voltage TA=25° C A -4 -3.2 -27 W 1.4 Maximum Junction-to-Lead ° C/W ° C/W Maximum Junction-to-Ambient A D

63 125

80 Maximum Junction-to-Ambient A SOT23 Top View Bottom View D G S G S D G D S Rev 3: Mar.

2011 www.aosmd.com Page

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5 AO3401A Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55° C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.5 -0.9 -1.3 V ID(ON) -27 A

41 50 TJ=125° C

62 75

47 60 m?

60 85 m? gFS

17 S VSD -0.7 -1 V IS -2 A Ciss

645 pF Coss

80 pF Crss

55 pF Rg

4 7.8

12 ? Qg(10V)

14 nC Qg(4.5V)

7 nC Qgs 1.5 nC Qgd 2.5 nC tD(on) 6.5 ns tr 3.5 ns tD(off)

41 ns tf

9 ns trr

11 ns Qrr 3.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/?s Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3.75?, RGEN=3? Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=-10V, VDS=-15V, ID=-4.0A Gate Source Charge Gate Drain Charge Total Gate Charge m? IS=-1A,VGS=0V VDS=-5V, ID=-4.0A VGS=-2.5V, ID=-2.5A VGS=-4.5V, ID=-3.5A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS ?A VDS=VGS ID=-250?A VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=-250?A, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-4.0A Reverse Transfer Capacitance IF=-4.0A, dI/dt=100A/?s VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initialTJ=25° C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures

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6 are obtained using