PDF《绍兴怡华电子科技有限公司》

Product:BTB04 1/7

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7 绍兴怡华电子科技有限公司 Shaoxing Yihua Electronic Technology Co.

,Ltd 浙江省绍兴市平江路328号高新科技园7幢Tel:0575-

81508812、81508813 Fax:0575-81508828 http:www.yihuaelec.com Product model:BTB04 封装Package:TO-

220、 TO-

251、 TO-252 Issue date:2013-1-1 Production:angelina IT(RMS)

4 A VDRM/VRRM

600 V IGT

25 mA 数值 单位 z 玻璃钝化芯片, 高可靠性和一致性 z Glass-passivated mesa chip for reliability and uniform z 低通态电流和高 浪涌电流能力 z Low on-state voltage and High ITSM z 环保 RoHS 产品 z RoHS products TO-220 S S S S D D G G TO-251 TO-252 封装Package: 主要特点: 绝对最大额定值 ABSOLUTE RATINGS (TC=25℃) 项目Parameter 符号Symbol 试验条件Condition 数值Value 单位 Unit 符号 极限值: 热阻: 符号 参数 数值 单位 Rth(j-c) Rth(j-c) Rth(j-c) Rth(j-c) Junction Junction Junction Junction to to to to case(AC) case(AC) case(AC) case(AC)

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3 3 ℃/W /W /W /W Rth(j-a) Rth(j-a) Rth(j-a) Rth(j-a) Junction Junction Junction Junction to to to to ambient ambient ambient ambient

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60 60 ℃/W /W /W /W 参数名称 符号 规范值 单位 测试条件 触发电流 I I I IGT GT GT GT ≤ ≤ ≤ ≤5

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5 m m m mA A A A V V V VD D D D=12V,I =12V,I =12V,I =12V,IT T T T=0.1A =0.1A =0.1A =0.1A T2+G+ T2+G+ T2+G+ T2+G+ ≤ ≤ ≤ ≤5

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5 mA mA mA mA T2+G- T2+G- T2+G- T2+G- ≤ ≤ ≤ ≤5

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5 mA mA mA mA T2-G- T2-G- T2-G- T2-G- ≤ ≤ ≤ ≤10

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10 mA mA mA mA T2-G+ T2-G+ T2-G+ T2-G+ 触发电压 V V V VGT GT GT GT ≤ ≤ ≤ ≤1.5 1.5 1.5 1.5 V V V V V V V VD D D D=12V, =12V, =12V, =12V, I I I IT T T T=0.1A =0.1A =0.1A =0.1A 维持电流 I I I IH H H H ≤ ≤ ≤ ≤1

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0 0 mA mA mA mA V V V VD D D D=12V,I =12V,I =12V,I =12V,IT T T T=0.1A =0.1A =0.1A =0.1A 电压上升率 dv/dt dv/dt dv/dt dv/dt ≥ ≥ ≥ ≥50

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50 V V V V/ / / /μ μ μ μS S S S V V V VD D D D=67%V =67%V =67%V =67%VDRM DRM DRM DRM 通态压降 V V V VTM TM TM TM ≤ ≤ ≤ ≤1. 1. 1. 1.7

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7 V V V V I I I IT T T T= = = =

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5 5A A A A 断态漏电流 I I I IDRM DRM DRM DRM ≤ ≤ ≤ ≤0. 0. 0. 0.5

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5 mA mA mA mA V V V VD D D D=V =V =V =VDRM DRM DRM DRM, , , , Tj=125 Tj=125 Tj=125 Tj=125℃ ℃ ℃ ℃ Product:BTB04 2/ 2/ 2/ 2/7

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7 电特性: 重复峰值断态电压 Repetitive peak off-state voltage VDRM ±600 ±800 V 通态方均根电流On-state RMS current IT(RMS) full sine wave

4 A full sine wave ,t=20ms

25 A 非重复浪涌峰值通态电流Non- repetitive surge peak on-state current ITSM full sine wave ,t=16.7ms

27 A I2 t t=10ms 3.1 A2 s 通态电流临界上升率 Repetitive rate of rise of on-state current after triggering dI/dt ITM=6A, IG=0.2A, dIG/dt=0.2A/μs

50 A/μs 峰值门极电流 Peak gate current IGM

2 A 峰值门极电压 Peak gate voltage VGM

5 V 峰值门极功率 Peak gate power PGM

5 W 平均门极功率 Average gate power PG(AV) over any 20ms period 0.5 W 存储温度 Storage temperature Tstg -40~150 ℃ 操作结温Operation junction temperature TVJ

125 ℃ Rth(j-c) Rth(j-c) Rth(j-c) Rth(j-c) Rth(j-a) Rth(j-a) Rth(j-a) Rth(j-a) Junction Junction Junction Junction Junction Junction Junction Junction to to to to to to to to case(AC) case(AC) case(AC) case(AC) ambient ambient ambient ambient Product:BTB04

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7 特性曲线: Product Product Product Product:BTB04

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7 特性曲线: Product Product Product Product:BTB04