PDF《TEMD5000》

TEMD5000 TELEFUNKEN Semiconductors Rev.

A1, 18-Oct-96

1 (5) Silicon PIN Photodiode Description TEMD5000 is a high speed and high sensitive PIN photo- diode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TOC5 devices in many applications. Due to its waterclear epoxy the device is sensitive to vis- ible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features D Large radiant sensitive area (A=7.5 mm2) D Wide angle of half sensitivity ? = ± 65° D High photo sensitivity D Fast response times D Small junction capacitance D Suitable for visible and near infrared radiation

12775 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Test Conditions Symbol Value Unit Reverse Voltage VR

60 V Power Dissipation Tamb x25 °C PV

215 mW Junction Temperature Tj

100 °C Storage Temperature Range Tstg C55...+100 °C Soldering Temperature t x3 s Tsd

260 °C Thermal Resistance Junction/Ambient RthJA

350 K/W TEMD5000 TELEFUNKEN Semiconductors Rev. A1, 18-Oct-96

2 (5) Basic Characteristics Tamb = 25_C Parameter Test Conditions Symbol Min Typ Max Unit Breakdown Voltage IR =

100 mA, E =

0 V(BR)

60 V Reverse Dark Current VR =

10 V, E =

0 Iro

2 30 nA Diode Capacitance VR =

0 V, f =

1 MHz, E =

0 CD

70 pF Diode Capacitance VR =

3 V, f =

1 MHz, E =

0 CD

25 40 pF Open Circuit Voltage Ee =

1 mW/cm2, l =

950 nm Vo

350 mV Temp. Coefficient of Vo Ee =

1 mW/cm2, l =

950 nm TKVo C2.6 mV/K Short Circuit Current EA =

1 klx Ik

70 mA Short Circuit Current Ee =

1 mW/cm2, l =

950 nm Ik

50 mA Temp. Coefficient of Ik Ee =

1 mW/cm2, l =

950 nm TKIk 0.1 %/K Reverse Light Current EA =

1 klx, VR =

5 V Ira

75 mA Reverse Light Current Ee =

1 mW/cm2, l =

950 nm, VR =

5 V Ira

40 55 mA Angle of Half Sensitivity ? ±65 deg Wavelength of Peak Sensitivity lp

900 nm Range of Spectral Bandwidth l0.5 600...1050 nm Noise Equivalent Power VR=10V, l=950nm NEP 4x10C14 W/√ Hz Rise Time VR=10V, RL=1kW, l=820nm tr

100 ns Fall Time VR=10V, RL=1kW, l=820nm tf

100 ns Typical Characteristics (Tamb = 25_C unless otherwise specified)

20 40

60 80

1 10

100 1000 I C Reverse Dark Current ( nA ) ro Tamb C Ambient Temperature ( °C )

100 94

8403 VR=10V Figure 1. Reverse Dark Current vs. Ambient Temperature

0 20

40 60

80 0.6 0.8 1.0 1.2 1.4 I C Relative Reverse Light Current ra rel Tamb C Ambient Temperature ( °C )

100 94

8416 VR=5V l=950nm Figure 2. Relative Reverse Light Current vs. Ambient Temperature TEMD5000 TELEFUNKEN Semiconductors Rev. A1, 18-Oct-96

3 (5) 0.01 0.1

1 0.1

1 10

100 1000 I C Reverse Light Current ( A ) ra Ee C Irradiance ( mW/cm2 )

10 12787 m VR=5V l=950nm Figure 3. Reverse Light Current vs. Irradiance 0.1

1 10

100 1000 EA C Illuminance ( lx )

94 8418 I C Reverse Light Current ( A ) ra m

101 102

103 104 VR=5V Figure 4. Reverse Light Current vs. Illuminance 0.1

1 10

1 10

100 VR C Reverse Voltage ( V )

100 12788 I C Reverse Light Current ( A ) ra m 1mW/cm2 0.5mW/cm2 0.2mW/cm2 0.1mW/cm2 0.05mW/cm2 l=950nm Figure 5. Reverse Light Current vs. Reverse Voltage 0.1

1 10

0 20

40 60

80 C C Diode Capacitance ( pF ) D VR C Reverse Voltage ( V )

100 94

8407 E=0 f=1MHz Figure 6. Diode Capacitance vs. Reverse Voltage

350 550

750 950

0 0.2 0.4 0.6 0.8 1.0

1150 94

8420 S ( ) C Relative Spectral Sensitivity rel l C Wavelength ( nm ) l Figure 7. Relative Spectral Sensitivity vs. Wavelength 0.4 0.2