PDF《IRFE220》

Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 2.

8 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 1.8 IDM Pulsed Drain Current ?

11 PD @ TC = 25°C Max. Power Dissipation

14 W Linear Derating Factor 0.11 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ? 0.242 mJ IAR Avalanche Current ? 2.2 A EAR Repetitive Avalanche Energy ? 1.4 mJ dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction -55 to

150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp.

300 (for 5s) Weight 0.42(typical) g The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. °C A 08/07/07 www.irf.com

1 Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80? 2.8A Features: n Surface Mount n Small Footprint n Alternative to TO-39 Package n Hermetically Sealed n Dynamic dv/dt Rating n Avalanche Energy Rating n Simple Drive Requirements n Light Weight For footnotes refer to the last page REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ? TRANSISTORS SURFACE MOUNT (LCC-18) IRFE220 JANTX2N6790U REF:MIL-PRF-19500/555 200V, N-CHANNEL LCC-18 PD - 93984A IRFE220, JANTX2N6790U

2 www.irf.com For footnotes refer to the last page Note: Corresponding Spice and Saber models are available on International Rectifier Website. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case ― ― 8.93 RthJ-PCB Junction to PC Board ― ―

26 Soldered to a copper clad PC board °C/W Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage

200 ― ― V VGS = 0V, ID = 1.0mA ?BVDSS/?TJ Temperature Coefficient of Breakdown ― 0.25 ― V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State ― ― 0.80 VGS = 10V, ID = 1.8A? Resistance ― ― VGS = 10V, ID = 2.8A? VGS(th) Gate Threshold Voltage 2.0 ― V VDS = VGS, ID = 250?A gfs Forward Transconductance 1.5 ― ― VDS > 15V, IDS = 1.8A? IDSS Zero Gate Voltage Drain Current ― ―

25 VDS = 160V, VGS = 0V ― ―

250 VDS = 160V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward ― ―

100 VGS = 20V IGSS Gate-to-Source Leakage Reverse ― ― -100 VGS = -20V Qg Total Gate Charge ― ― 14.3 VGS = 10V, ID = 2.8A Qgs Gate-to-Source Charge ― ― 3.0 nC VDS = 100V Qgd Gate-to-Drain ('Miller') Charge ― ― 9.0 td(on) Turn-On Delay Time ― ―

40 VDD = 74V, ID = 2.8A tr Rise Time ― ―

50 VGS = 10V, RG = 7.5? td(off) Turn-Off Delay Time ― ―

50 tf Fall Time ― ―

50 LS + LD Total Inductance ― 6.1 ― Ciss Input Capacitance ―

260 VGS = 0V, VDS = 25V Coss Output Capacitance ―

100 ― pF f = 1.0MHz Crss Reverse Transfer Capacitance ―

30 ― nA nH ns ?A ? Measured from the center of drain pad to center of source pad S Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) ― ― 2.8 ISM Pulse Source Current (Body Diode) ? ― ―

11 VSD Diode Forward Voltage ― ― 1.5 V Tj = 25°C, IS = 2.8A, VGS = 0V ? trr Reverse Recovery Time ― ―