PDF《AON7405》

AON7405 30V P-Channel MOSFET General Description Product Summary VDS ID (at VGS= -10V) -50A RDS(ON) (at VGS= -10V) < 6.

2m? RDS(ON) (at VGS = -6V) < 8.9m? 100% UIS Tested 100% Rg Tested Symbol VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. ? RoHS and Halogen-Free Compliant V Maximum Units Parameter Absolute Maximum Ratings TA=25° C unless otherwise noted Drain-Source Voltage -30 DFN 3.3x3.3 EP Top View Bottom Pin

1 Top View

1 2

3 4

8 7

6 5 G D S VDS VGS IDM IAR, IAS EAR, EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Thermal Characteristics Maximum Junction-to-Case ° C/W ° C/W Maximum Junction-to-Ambient A D 1.1

55 1.5 Power Dissipation B W Power Dissipation A PDSM W TA=70° C

83 4 TA=25° C A TA=70° C -25 ID -50 -39 TC=25° C TC=100° C A -44 A V ±25 Gate-Source Voltage Continuous Drain CurrentG TA=25° C IDSM V Drain-Source Voltage -30 Maximum Junction-to-Ambient A ° C/W RθJA

16 45

20 ° C -210 Pulsed Drain Current C Units Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C -20 Continuous Drain Current

97 Parameter Typ Max TC=25° C 6.25

33 TC=100° C Junction and Storage Temperature Range -55 to

150 PD Rev.2. 0: May

2013 www.aosmd.com Page

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6 AON7405 Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55° C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -1.7 -2.2 -2.8 V ID(ON) -210 A 5.1 6.2 TJ=125° C 7.6 9.2 VGS=-6V, ID=-20A 7.1 8.9 m? 10.7 m? gFS

46 S VSD -0.7 -1 V IS -50 A Ciss

1960 2450

2940 pF Coss

380 550

720 pF Crss

220 370

520 pF Rg

7 14

28 ? Qg(10V)

33 42

51 nC Qg(4.5V)

16 21

26 nC Qgs 5.5

7 8.5 nC Qgd

7 12

17 nC t 9.5 ns Drain-Source Breakdown Voltage On state drain current ID=-250?A, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-20A Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS ?A VDS=VGS ID=-250?A VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance m? IS=-1A,VGS=0V VDS=-5V, ID=-20A VGS=-4.5V, ID=-10A Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A Gate Source Charge Gate Drain Charge Total Gate Charge Maximum Body-Diode Continuous CurrentG Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS tD(on) 9.5 ns tr

10 ns tD(off)

104 ns tf

78 ns trr

20 25

30 ns Qrr

37 47

57 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/?s Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/?s Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=0.75?, RGEN=3? A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures