PDF《AOSD21307》

AOSD21307 General Description Product Summary VDS ID (at VGS=-10V) -9A RDS(ON) (at VGS=-10V) < 16mΩ RDS(ON) (at VGS=-4.

5V) < 28mΩ Applications 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS Avalanche energy L=0.1mH C EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RqJL ? Notebook AC-in Load Switch ? Battery Protection Charge/Discharge Power Dissipation B 1.2 TA=70° C PD -30 2.0 Gate-Source Voltage Pulsed Drain Current C -7 Parameter Drain-Source Voltage Continuous Drain Current Maximum Units TA=25° C TA=70° C Maximum Junction-to-Lead ° C/W ° C/W Maximum Junction-to-Ambient A D

32 90

40 Maximum Junction-to-Ambient A ° C/W RqJA

50 74 AOSD21307 SO-8 Tape & Reel

3000 Absolute Maximum Ratings TA=25° C unless otherwise noted 62.5 Parameter Max ° C Units Junction and Storage Temperature Range -55 to

150 Typ 30V Dual P-Channel MOSFET TA=25° C Avalanche Current C Thermal Characteristics W ID A

33 -36 mJ

54 -9 V A ±25 V Orderable Part Number Package Type Form Minimum Order Quantity -30V ? Latest Advanced Trench Technology ? Low RDS(ON) ? High Current Capability ? RoHS and Halogen-Free Compliant G1 D1 S1 G1 S1 G2 S2 D1 D1 D2 D2

2 4

5 1

3 8

6 7 Top View SOIC-8 Top View Bottom View Pin1 G2 D2 S2 Pin1 Rev.1.0: November

2018 www.aosmd.com Page

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5 AOSD21307 Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55° C -5 ? Latest advanced ±100 nA VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.3 V

12 16 TJ=125° C

17 23

19 28 mΩ gFS

25 S VSD -0.7 -1 V IS -3 A Ciss

1995 pF Coss

300 pF Crss

260 pF Rg 4.5

9 Ω Qg(10V) 36.5

51 nC Qg(4.5V)

17 24 nC Qgs

7 nC Qgd

9 nC tD(on) 12.5 ns tr

15 ns tD(off)

43 ns tf 19.5 ns trr 13.5 ns Qrr 21.5 nC APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Gate-Body leakage current Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS μA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=-250mA, VGS=0V Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz VDS=VGS, ID=-250mA Output Capacitance Forward Transconductance VGS=-10V, ID=-9A IS=-1A, VGS=0V VDS=-5V, ID=-9A VDS=0V, VGS=±25V Maximum Body-Diode Continuous Current Input Capacitance VGS=-4.5V, ID=-7A Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=-9A, di/dt=500A/ms Turn-Off DelayTime Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=1.67W, RGEN=3W Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC PARAMETERS IF=-9A, di/dt=500A/ms Turn-On Rise Time Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS Turn-On DelayTime VGS=-10V, VDS=-15V, ID=-9A Total Gate Charge Gate resistance f=1MHz mΩ RDS(ON) A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures