PDF《DMP2018LFK》

DMP2018LFK Document number: DS35357 Rev.

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2012 ? Diodes Incorporated DMP2018LFK ADVANCE INFORMATION NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on)max ID TA = 25°C -20V 16m? @ VGS = -4.5V -12.8A 25m? @ VGS = -2.0V -10A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? DC-DC Converters ? Power management functions ? Notebook PC Applications ? Portable Equipment Applications Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Low Input/Output Leakage ? ESD Protected Gate up to 2kV ? Lead Free by Design, RoHS Compliant (Note 1) ? "Green" Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability Mechanical Data ? Case: U-DFN2523-6 ? Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level

1 per J-STD-020 ? Terminals: Finish ? NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method

208 ? Weight: 0.008 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMP2018LFK-7 U-DFN2523-6 3,000 / Tape & Reel DMP2018LFK-13 U-DFN2523-6 10,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year

2011 2012

2013 2014

2015 2016

2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code

1 2

3 4

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9 O N D U-DFN2523-6 Bottom View Equivalent Circuit P8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex:

9 = September) Source Gate Protection Diode Gate Drain ESD PROTECTED TO 2kV Pin 1,

2 = Source Pin

3 = Gate Pin 4, 5,

6 = Drain P8 YM Pin

1 DMP2018LFK Document number: DS35357 Rev.

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2012 ? Diodes Incorporated DMP2018LFK ADVANCE INFORMATION NEW PRODUCT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID -9.2 -7.3 A t