PDF《SQM60N06-15》

SQM60N06-15 www.

vishay.com Vishay Siliconix S11-2035-Rev. C, 17-Oct-11

1 Document Number:

64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel

60 V (D-S)

175 °C MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Package with Low Thermal Resistance ? AEC-Q101 Qualifiedd ?

100 % Rg and UIS Tested ? Characterization Ongoing ? Compliant to RoHS Directive 2002/95/EC Notes a. Package limited. b. Pulse test;

pulse width ?

300 μs, duty cycle ?

2 %. c. When mounted on

1 square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V)

60 RDS(on) (?) at VGS =

10 V 0.015 ID (A)

56 Configuration Single D G S N-Channel MOSFET TO-263 S D G Top View ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM60N06-15-GE3 ABSOLUTE MAXIMUM RATINGS (TC =

25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS

60 V Gate-Source Voltage VGS ±

20 Continuous Drain Current TC =

25 °C ID

56 A TC =

125 °C

32 Continuous Source Current (Diode Conduction)a IS

60 Pulsed Drain Currentb IDM

227 Single Pulse Avalanche Current L = 0.1 mH IAS

29 Single Pulse Avalanche Energy EAS

42 mJ Maximum Power Dissipationb TC =

25 °C PD

107 W TC =

125 °C

35 Operating Junction and Storage Temperature Range TJ, Tstg -

55 to +

175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA

40 °C/W Junction-to-Case (Drain) RthJC 1.4 SQM60N06-15 www.vishay.com Vishay Siliconix S11-2035-Rev. C, 17-Oct-11

2 Document Number:

64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test;

pulse width ?

300 μs, duty cycle ?

2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC =

25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID =

250 μA

60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID =

250 μA 2.5 - 3.5 Gate-Source Leakage IGSS VDS =

0 V, VGS = ±

20 V - - ±

100 nA Zero Gate Voltage Drain Current IDSS VGS =

0 V VDS =

60 V - - 1.0 μA VGS =

0 V VDS =

60 V, TJ =

125 °C - -

50 VGS =

0 V VDS =

60 V, TJ =

175 °C - -

250 On-State Drain Currenta ID(on) VGS =

10 V VDS???5 V

75 - - A Drain-Source On-State Resistancea RDS(on) VGS =

10 V ID =

30 A - 0.012 0.015 ? VGS =

10 V ID =

30 A, TJ =

125 °C - - 0.027 VGS =

10 V ID =

30 A, TJ =

175 °C - - 0.033 Forward Transconductanceb gfs VDS =

15 V, ID =

30 A -

61 - S Dynamicb Input Capacitance Ciss VGS =

0 V VDS =

25 V, f =

1 MHz -

1983 2480 pF Output Capacitance Coss -

314 395 Reverse Transfer Capacitance Crss -

125 160 Total Gate Chargec Qg VGS =