PDF《IXTT60N20L2》

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2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

200 V VGSS Continuous ±

20 V VGSM Transient ±

30 V ID25 TC = 25°C

60 A IDM TC = 25°C, Pulse Width Limited by TJM

150 A IA TC = 25°C

60 A EAS TC = 25°C

2 J PD TC = 25°C

540 W TJ -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TL 1.

6mm (0.063in) from Case for 10s

300 °C TSOLD Plastic Body for 10s

260 °C Md Mounting Torque (TO-247&TO-3P) 1.13/10 Nm/lb.in. Weight TO-268 4.0 g TO-3P 5.5 g TO-247 6.0 g N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA

200 V VGS(th) VDS = VGS , ID = 250μA 2.5 4.5 V IGSS VGS = ± 20V, VDS = 0V ±100 nA IDSS VDS = VDSS , VGS = 0V

5 μA TJ = 125°C

50 μA RDS(on) VGS = 10V, ID = 0.5 ? ID25 , Note

1 45 mΩ Linear L2TM Power MOSFET w/ Extended FBSOA IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 DS100203(10/09) VDSS = 200V ID25 = 60A RDS(on) ≤ ≤ ≤ ≤ ≤ 45mΩ Ω Ω Ω Ω Advance Technical Information Features z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Guaranteed FBSOA at 75°C Advantages z Easy to Mount z Space Savings z High Power Density Applications z Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulators G = Gate D = Drain S = Source Tab = Drain TO-247(IXTH) G D S Tab TO-3P (IXTQ) Tab D G S TO-268 (IXTT) G S Tab IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. gfs VDS = 10V, ID = 0.5 ? ID25 , Note

1 35

44 53 S Ciss 10.5 nF Coss VGS = 0V, VDS = 25V, f = 1MHz

1080 pF Crss

255 pF td(on)

26 ns tr

23 ns td(off)

90 ns tf

18 ns Qg(on)

255 nC Qgs VGS = 10V, VDS = 0.5 ? VDSS , ID = 0.5 ? ID25

48 nC Qgd

90 nC RthJC 0.23 °C/W RthCS (TO-247&TO-3P) 0.25 °C/W Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA VDS = 160V, ID = 1.88A, TC = 75°C, tp = 3s

300 W Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Resistive Switching Times VGS = 10V, VDS = 0.5 ? VDSS , ID = 0.5 ? ID25 RG = 1Ω (External) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. IS VGS = 0V

60 A ISM Repetitive, Pulse Width Limited by TJM

240 A VSD IF = IS , VGS = 0V, Note

1 1.4 V trr

330 ns IRM 25.0 A QRM 4.13 μC IF = 30A, -di/dt = 100A/μs, VR = 75V, VGS = 0V TO-268 (IXTT) Outline Terminals:

1 - Gate

2 - Drain

3 - Source Tab - Drain e ? P

1 2

3 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC