PDF《BAS70.../BAS170W》

2014-02-13

1 BAS70.

../BAS170W Silicon Schottky Diode ? General-purpose diode for high-speed switching ? Circuit protection ? Voltage clamping ? High-level detecting and mixing ? BAS70-04S: For orientation in reel see package information below ? Pb-free (RoHS compliant) package ? Qualified according AEC Q1011) BAS70-04 BAS70-04W BAS70-04S BAS70 BAS170W BAS70-02L BAS70-02W BAS70-02V BAS70-05 BAS70-05W ! , , , ! # $ , , ! , ! , , ! BAS70-06 BAS70-06W BAS70-07 BAS70-07W , ! , ! , , 1BAS70-02L is not qualified according AEC Q101 2014-02-13

2 BAS70.../BAS170W Type Package Configuration LS(nH) Marking BAS170W BAS70 BAS70-02L BAS70-02V BAS70-02W* BAS70-04 BAS70-04S BAS70-04W BAS70-05 BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W SOD323 SOT23 TSLP-2-1 SC79 SCD80 SOT23 SOT363 SOT323 SOT23 SOT323 SOT23 SOT323 SOT143 SOT343 single single single, leadless single single series dual series series common cathode common cathode common anode common anode parallel pair parallel pair 1.8 1.8 0.4 0.6 0.6 1.8 1.6 1.4 1.8 1.4 1.8 1.4

2 1.8 white

7 73s F c

73 74s 74s 74s 75s 75s 76s 76s 77s 77s * Not for new design Maximum Ratings at TA =

25 °C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR

70 V Forward current IF

70 mA Non-repetitive peak surge forward current t ≤ 10ms IFSM

100 Total power dissipation BAS70, BAS70-07, TS ≤

72 °C BAS70-02L, TS ≤

117 °C BAS70-02W, -02V, TS ≤

107 °C BAS70-04, BAS70-06, TS ≤

48 °C BAS70-04S/W/-06W, BAS170W, TS ≤

97 °C BAS70-05, TS ≤

22 °C BAS70-05W, TS ≤

90 °C BAS70-07W, TS ≤

114 °C Ptot

250 250

250 250

250 250

250 250 mW Junction temperature TJ

150 °C Operating temperature range Top -55 ...

125 Storage temperature TStg -55 ...

150 2014-02-13

3 BAS70.../BAS170W Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAS70, BAS70-07 BAS70-02L BAS70-02W, -02V BAS70-04, BAS70-06 BAS70-04S/W, BAS70-06W BAS70-05 BAS70-05W BAS70-07W BAS170W RthJS ≤

310 ≤

130 ≤

170 ≤

410 ≤

210 ≤

510 ≤

240 ≤

145 ≤

190 K/W Electrical Characteristics at TA =

25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) =

10 ?A V(BR)

70 - - V Reverse current VR =

50 V IR - - 0.1 ?A Forward voltage IF =

1 mA IF =

10 mA IF =

15 mA VF

300 600

720 375

705 880

410 750

1000 mV Forward voltage matching2) IF =

10 mA ? VF - -

20 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2?VF is the difference between lowest and highest VF in a multiple diode component. 2014-02-13

4 BAS70.../BAS170W Electrical Characteristics at TA =

25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR =

0 , f =

1 MHz CT - 1.5

2 pF Forward resistance IF =

10 mA, f =

10 kHz rf -

34 - ? Charge carrier life time IF =

25 mA τ rr - -

100 ps 2014-02-13

5 BAS70.../BAS170W Diode capacitance CT = ? (VR) f = 1MHz

0 0.0 EHB00044 C VR T

20 40

60 V

80 0.5 1.0 1.5 pF 2.0 BAS 70W/BAS 170W Forward resistance rf = ? (IF) f =

10 kHz

10 -2

10 -1

10 0

10 1

10 2 mA IF

1 10

2 10

3 10

4 10 Ohm r f Reverse current IR = ?(VR) TA = Parameter

0 EHB00043 Ι VR R

10 -1 -3

10 0

10 1

10 2

10 A

10 -2

20 40

60 V

80 TA =

150 C

85 C

25 C ? BAS 70W/BAS 170W Forward current IF = ? (VF) TA = Parameter 0.0 EHB00042 BAS 70W/BAS 170W Ι VF F 10-1 -2