PDF《WNM01N10》

WNM01N10 WNM01N10 Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-free. Features ? Trench Technology ? Supper high density cell design ? Excellent ON resistance for higher DC current ? Small package SOT-23 Applications ? Driver for Relay, Solenoid, Motor, LED etc. ? DC-DC converter circuit ? Power Switch ? Load Switch ? Charging Http://www.sh-willsemi.com SOT-23 Pin configuration (Top view) NA = Device Code Y = Year W = Week Marking Order information Device Package Shipping WNM01N10-3/TR SOT-23 3000/Reel&Tape VDS (V) Typical Rds(on) (?)

100 0.235@ VGS=10V 0.255@ VGS=4.5V S G D S G D D

3 2 S

1 G Single N-Channel, 100V, 1.7A, Power MOSFET Will Semiconductor Ltd.

1 2017/05/03 C Rev. 1.3 WNM01N10 Absolute Maximum ratings Thermal resistance ratings a Surface mounted on FR-4 Board using

1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width