PDF《TGA4514》

TGA4514

1 TriQuint Semiconductor: www.

triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A -30 -20 -10

0 10

20 30

28 29

30 31

32 33

34 35

36 37

38 Frequency (GHz) Gain &

R eturn Loss (dB ) ? Typical Frequency Range:

31 -

35 GHz ? 33.5 dBm Nominal Psat @ Vd = 7V ? 31.5 dBm Nominal P1dB ? IMD3: 31dBc at Pout/tone=22dBm ?

18 dB Nominal Gain ? Bias

6 -

7 V,

1150 mA ? 0.25 um 2MI pHEMT Technology ? Chip Dimensions 4.0 x 3.2 x 0.1 mm ? (0.161 x 0.128 x 0.004) in ? Point-to-Point Radio ? Military Radar Systems ? Ka Band Sat-Com Bias Conditions: Vd =

6 V, Id =

1150 mA GAIN IRL ORL

28 29

30 31

32 33

34 35

30 31

32 33

34 35

36 37 Frequency (GHz) Psat @ Pin= 20dBm (dBm) Bias Conditions: Vd = 6/7 V, Id =

1150 mA Vd =

7 V Vd =

6 V

2 Watt Ka-Band Power Amplifier Key Features Primary Applications Measured Performance Product Description The TriQuint TGA4514 is Power Amplifier for Ka- band applications. The part is designed using TriQuint'

s proven standard 0.25 um gate Power pHEMT production process. The TGA4514 provides a nominal 33.5 dBm of output power at an input power level of

20 dBm with a small signal gain of

18 dB. Nominal IMD3 is 31dBc at Pout/tone of

22 dBm. The part is ideally suited for low cost markets such as Point-to-Point Radio and Ka-band Sat-Com. Datasheet subject to change without notice. TGA4514

2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes Vd-Vg Drain to Gate Voltage

13 V Vd Drain Voltage

8 V 2/ Vg Gate Voltage Range -5 to

0 V Id Drain Current 2.5 A 2/ Ig Gate Current Range -9 to

210 mA Pin Input Continuous Wave Power

27 dBm 2/ Tchannel Channel Temperature

200 °C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter 1/ Value Vd Drain Voltage

6 V Id Drain Current

1150 mA Id_Drive Drain Current under RF Drive

1500 mA Vg Gate Voltage -0.45 V 1/ See assembly diagram for bias instructions. TGA4514

3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A Table III RF Characterization Table Bias: Vd =

6 V, Id =

1150 mA, Vg = -0.45 V Typical SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS Gain Small Signal Gain F =

31 -

35 GHz

18 dB IRL Input Return Loss F =

31 -

35 GHz -7 dB ORL Output Return Loss F =

31 -

35 GHz -10 dB Psat Saturated Output Power @ Pin = 20dBm F =

31 -

35 GHz 32.5 dBm P1dB Output Power @ 1dB Gain Compression F =

31 -

35 GHz

32 dBm IMD3 IMD3 @ Pout/Tone = 22dBm, Freq = 33GHz F =

31 -

35 GHz

31 dBc TGA4514

4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate =

70 °C Pd =

10 W Tchannel =

199 °C Thermal Resistance, θjc Vd =

6 V Id = 1.15 A Pd = 6.9 W Tbaseplate =

70 ?C θjc = 11.5 °C/W Tchannel =

149 °C Tm = 1.1E+6 Hrs Thermal Resistance, θjc Under RF Drive @ 33GHz Vd =

6 V Id = 1.45 A Pout = 32.5 dBm Pd = 6.9 W Tbaseplate =

70 ?C θjc = 11.5 °C/W Tchannel =

149 °C Tm = 1.1E+6 Hrs Mounting Temperature

30 Seconds

320 °C Storage Temperature -65 to

150 °C Median Lifetime (Tm) vs. Channel Temperature TGA4514

5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A

10 12

14 16

18 20

22 28

29 30

31 32

33 34

35 36

37 38 Frequency (GHz) Gain (dB) Bias Conditions: Vd =

6 V, Id =

1150 mA, Room Temp.

28 29

30 31

32 33

34 35

30 31

32 33

34 35

36 37 Frequency (GHz) Psat @ Pin = 20dBm (dBm ) Vd =

6 V Vd =

7 V Bias Conditions: Vd = 6/7 V, Id =

1150 mA, Room Temp. Measured Data TGA4514

6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A -35 -30 -25 -20 -15 -10 -5

0 28

29 30

31 32

33 34

35 36

37 38 Frequency (GHz) Input Return Loss (dB) Bias Conditions: Vd =

6 V, Id =

1150 mA, Room Temp. -35 -30 -25 -20 -15 -10 -5

0 28

29 30

31 32

33 34

35 36

37 38 Frequency (GHz) O utput Return Loss (dB) Measured Data TGA4514

7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A

25 26

27 28

29 30

31 32

33 34

35 31

32 33

34 35

36 37 Frequency (GHz) Pout (dBm )

25 26

27 28

29 30

31 32

33 34

35 30

31 32

33 34

35 36 Frequency (GHz) Pout (dBm) Bias Conditions: Vd =

6 V, Id =

1150 mA, Room Temp. Psat @ Pin=20dBm P1dB Bias Conditions: Vd =

7 V, Id =

1150 mA, Room Temp. Psat @ Pin=20dBm P1dB Measured Data TGA4514

8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A

0 5

10 15

20 25

30 35 -5 -3 -1

1 3

5 7

9 11

13 15

17 19

21 23 Pin (dBm) Pout (dBm) &

Power Gain (dB)

200 400

600 800

1000 1200

1400 1600 Id (mA) Bias Conditions: Vd =

6 V, Id =

1150 mA, Freq =

33 GHz, Room Temp. Gain Pout Id

0 10

20 30

40 50

60 6

8 10

12 14

16 18

20 22

24 26

28 30 Pout per tone (dBm) IMD3 (dBc) Bias Conditions: Vd =

6 V, Id =

1150 mA, Freq =

33 GHz, Room Temp. Measured Data TGA4514

9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A -10 -5

0 5

10 15

20 25

25 26

27 28

29 30

31 32

33 34

35 36

37 38

39 40 Frequency (GHz) Gain (dB) Bias Conditions: Vd =

6 V, Id =

1150 mA +25 0C -40 0C +85 0C Measured Data TGA4514

10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A RF Output RF Input TGA4514 Vg_Bottom Vg_Top Vd_Top Vd_Bottom Electrical Schematic

1 3

5 2

6 4 Bias Procedures Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Turn off RF supply Vd_set to +6 V Reduce Vg to -1.5V. Ensure Id ~

0 mA Adjust Vg more positive until quiescent Id is

1115 mA. This will be ~ Vg = -0.45 V Turn Vd to

0 V Apply RF signal to input Turn Vg to

0 V TGA4514

11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Mechanical Drawing TGA4514

12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] July

2009 ? Rev A GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Apply bias for Vd on both sides. Bias may be applied for Vg from either side. Recommended Assembly Diagram TGA4514

13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]........