PDF《BLM4953》

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belling.com.cn V2.0 Page1 BLM4953 Pb Free Product P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4953 uses advanced trench technology to prov ide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON) < 105m? @ VGS=-4.5V RDS(ON) < 55m? @ VGS=-10V High Power and current handing capability Lead free product is acquired Surface Mount Package Application PWM applications Load switch Power management G1 D1 D2 G2 S1 S2 Schematic diagram Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

4953 BLM4953 SOP-8 ?330mm 12mm

2500 units Absolute Maximum Ratings (TA=25℃ ℃ ℃ ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -5.1 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To

150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA

50 /W ℃ www.belling.com.cn V2.0 Page2 BLM4953 Pb Free Product Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250?A -30 -33 - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 ?A Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250?A -1 -1.6 VGS=-10V, ID=-5.1A -

48 55 m? Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.2A -

73 105 m? Forward Transconductance gFS VDS=-15V,ID=-4.5A

4 7 - S Dynamic Characteristics (Note4) Input Capacitance Clss -

520 - PF Output Capacitance Coss -

130 - PF Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz -

70 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) -

15 - nS Turn-on Rise Time tr -

13 - nS Turn-Off Delay Time td(off) -

58 - nS Turn-Off Fall Time tf VDD=-15V, ID=-1A, VGS=-10V,RGEN=6? -

21 - nS Total Gate Charge Qg -

12 - nC Gate-Source Charge Qgs - 2.2 - nC Gate-Drain Charge Qgd VDS=-15V,ID=-5.3A,VGS=-10V -

3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤

10 sec. 3. Pulse Test: Pulse Width ≤ 300?s, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production -2 V www.belling.com.cn V2.0 Page3 BLM4953 Pb Free Product TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Figure

3 Power Dissipation Vds Drain-Source Voltage (V) Figure

5 Output CHARACTERISTICS VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90% tr ton 90% 10% toff td(off) tf 90% VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90% 90% tr ton 90% 10% toff td(off) tf 90% Figure 2:Switching Waveforms TJ-Junction Temperature(℃) Figure

4 Drain Current ID- Drain Current (A) Figure

6 Drain-Source On-Resistance P D Power(W) I D - Drain Current (A ) Rdson On-Resistance(m Ω ) I D - Drain Current (A) www.belling.com.cn V2.0 Page4 BLM4953 Pb Free Product Vgs Gate-Source Voltage (V) Figure

7 Transfer Characteristics Vgs Gate-Source Voltage (V) Figure

9 Rdson vs Vgs Qg Gate Charge (nC) Figure

11 Gate Charge TJ-Junction Temperature(℃) Figure

8 Drain-Source On-Resistance Vds Drain-Source Voltage (V) Figure

10 Capacitance vs Vds Vsd Source-Drain Voltage (V) Figure

12 Source- Drain Diode Forward I D - Drain Current (A) Rdson On-Resistance(m Ω ) Vgs Gate-Source Voltage (V) Normalized On-Resistance C Capacitance (pF) I s - Reverse Drain Current (A) www.belling.com.cn V2.0 Page5 BLM4953 Pb Free Product Vds Drain-Source Voltage (V) Figure

13 Safe Operation Area Square Wave Pluse Duration(sec) Figure

14 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance I D - Drain Current (A) www.belling.com.cn V2.0 Page6 BLM4953 Pb Free Product SOP-8 PACKAGE IN FORMATION